In II-VI group, the doping in CdTe nanocrystals (NCs) is more difficult than other chalcogenides. In this communication, CdTe nanocrystals containing Cu impurities were carefully synthesized based on controlled reverse cation exchange process between as-prepared Cu₇Te₅ nanocubes and Cd²⁺ ions. By well-defined Cu₇Te₅ nanocubes, the obtained CdTe NCs kept the original morphology. The concentration of Cu impurities in CdTe NCs was controlled by the regulation such reverse cation exchange. Additionally, the regulation from band gap (BG) photoluminescence (PL) to the coexistence of the bandgap emission, dopant emission, and surface-state emission was realized. This tailoring from undoped to doped emission in the case of Cu impurities is helpful to study the Cu related doping in telluride NCs.

在 II-VI 族中，CdTe 纳米晶体 (NCs) 中的掺杂比其他硫族化物更难。在本次交流中，基于所制备的 Cu ₇ Te ₅纳米立方体和 Cd ²⁺离子之间的受控反向阳离子交换过程，精心合成了含有 Cu 杂质的 CdTe 纳米晶体。由定义明确的 Cu ₇ Te ₅纳米立方体，获得的 CdTe NCs 保持原始形态。CdTe NCs 中铜杂质的浓度是通过这种反向阳离子交换的调节来控制的。此外，实现了从带隙 (BG) 光致发光 (PL) 到带隙发射、掺杂剂发射和表面态发射的共存的调节。在 Cu 杂质的情况下，这种从未掺杂到掺杂发射的调整有助于研究碲化物 NC 中与 Cu 相关的掺杂。