Hybrid CMOS multi-frame imagers with exposure times down to ∼2 ns have made significant impacts in high energy density physics and inertial confinement fusion research. The detector thickness is a key parameter in both detector quantum efficiency and temporal response. The Icarus hybrid CMOS imager has been fabricated with Si detector thicknesses of 8, 25, and 100 µm. The temporal response of imaging sensors with exposure time down to 2 ns has been examined and compared to directly measured photodiode current. The 100-μm thick variant displays extended features related to charge carrier collection and is more susceptible to field collapse. We also demonstrate charge collection time effects on spatial response.

中文翻译：

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探测器厚度对纳秒门控成像器响应的影响

曝光时间低至 2 ns 的混合 CMOS 多帧成像器在高能量密度物理和惯性约束聚变研究中产生了重大影响。探测器厚度是探测器量子效率和时间响应的关键参数。Icarus 混合 CMOS 成像器的硅探测器厚度为8、25和 100微米。已经检查了曝光时间低至 2 ns 的成像传感器的时间响应，并与直接测量的光电二极管电流进行了比较。在100- μ微米厚的变体显示扩展有关的电荷载流子收集功能，并且也是场崩溃更敏感。我们还展示了电荷收集时间对空间响应的影响。