A wafer-type monitoring apparatus that can simultaneously measure the two-dimensional (2D) distributions of substrate temperature and plasma parameters is developed. To measure the temperature of the substrate, a platinum resistance temperature detector is used. The plasma density and electron temperature are obtained using the floating harmonics method, and incoming heat fluxes from the plasma to the substrate are obtained from the plasma density and electron temperature. In this paper, 2D distributions of the substrate temperature, plasma density, and electron temperature are obtained simultaneously for the first time in inductively coupled plasma. The shapes of the 2D distributions of the substrate temperature and incoming heat flux are similar to each other, but some differences are found. To understand that, an energy balance equation for the substrate is established, which shows good agreement with the experimental results. This apparatus will promote the understanding of surface reactions, which are very sensitive to the temperatures and plasma densities in plasma processing.

中文翻译：

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一种用于二维测量低温等离子体中等离子体参数和温度分布的晶片状装置

开发了一种可以同时测量衬底温度和等离子体参数的二维 (2D) 分布的晶片型监测装置。为了测量基板的温度，使用了铂电阻温度检测器。使用浮动谐波方法获得等离子体密度和电子温度，并且从等离子体密度和电子温度获得从等离子体到衬底的传入热通量。本文首次同时获得了电感耦合等离子体中衬底温度、等离子体密度和电子温度的二维分布。基板温度和传入热通量的二维分布形状彼此相似，但发现了一些差异。要理解这一点，建立了衬底的能量平衡方程，与实验结果吻合良好。该设备将促进对表面反应的理解，表面反应对等离子体处理中的温度和等离子体密度非常敏感。