This paper reports various properties of four Cu-doped SnO₂ thin films (hereafter called CuSnO-TFs) synthesized on glass substrate at temperature 80 °C via the standard chemical bath deposition method. The as-deposited films were annealed at 400 °C for 1 h. The as-prepared samples were characterized at room temperature using different analytical tools to determine the effects of varying Cu doping contents (0–3 wt%) on their structures, morphologies, and optical characteristics. The XRD analyses of the studied CuSnO-TFs showed their body-centered tetragonal structures in rutile phase with high purity and good polycrystallinity. The average crystallite size was increased from 17.6 to 34.52 nm with the increase of Cu contents from 0 to 3%, respectively. The SEM images of the grown films revealed agglomerated morphologies with the nucleation of spherical clusters or granules. Both visible transmittance and optical band gap energies of the films were decreased with the increase of Cu levels. In addition, the values of the refractive index, extinction coefficient, and dielectric constant of the deposited films were gradually increased and shifted towards higher wavelengths with the increase of Cu doping proportion. It was shown that by tuning the Cu contents overall properties of the proposed SnO₂ thin films can be customized which are desired for diverse functional applications.

本文报道了四种Cu掺杂的SnO _2的各种性质通过标准化学浴沉积方法在80°C的温度下在玻璃基板上合成的薄膜（以下称为CuSnO-TFs）。将沉积后的薄膜在400°C退火1小时。所制备的样品在室温下使用不同的分析工具进行表征，以确定变化的Cu掺杂含量（0–3 wt％）对其结构，形态和光学特性的影响。对所研究的CuSnO-TFs的XRD分析表明，它们在金红石相中以体心为中心的四方结构具有高纯度和良好的多晶性。随着Cu含量从0％增加到3％，平均微晶尺寸从17.6nm增加到34.52nm。生长的薄膜的SEM图像显示出球形团簇或颗粒成核的团聚形态。随着Cu含量的增加，薄膜的可见光透射率和光学带隙能量均降低。另外，随着Cu掺杂比例的增加，沉积膜的折射率，消光系数和介电常数的值逐渐增加并向更高的波长偏移。结果表明，通过调节Cu含量，可以改善拟议的SnO的总体性能。可以定制_2种薄膜，满足各种功能应用的需求。