We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we then optimize a set of $N$ energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum $N$ such that the error between the target defect density profile and the defect density profile generated by the $N$ energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 $\mathrm{\mu }$m surface layers of ¹⁵N or vacancies (using ${}^4$He).

我们描述了一种方法，该方法可自动生成离子注入配方，一组能量和注量，以使用最少的所需能量在固体中生成所需的缺陷密度分布。我们对一系列离子能量的缺陷密度分布进行仿真，使其具有适当的函数，然后进行插值以生成任意离子能量下的缺陷密度分布。给定$ñ$ 能量，然后我们优化一组 $ñ$能量通量对以匹配给定的目标缺陷密度分布。最后，我们找到最小$ñ$ 这样，目标缺陷密度分布图和由缺陷生成的缺陷密度分布图之间的误差 $ñ$能量通量对小于给定的阈值。受量子感测应用中金刚石中氮原子空位中心的启发，我们应用我们的技术来计算最佳离子注入配方，以创建均匀密度1$\mathrm{\mu }$m个¹⁵ N的表面层或空位（使用${}^4$他）。