Linear magnetoresistance (LMR) is a special case of a magnetic-field induced resistivity response, which has been reported in highly disordered semiconductor systems and in topological materials. In this work, we observe LMR effect in half-metallic perovskite Sr₂CrMoO₆ thin films, of which the maximum MR value exceeds +1600% at 2 K and 14 T. It is an unusual behavior in ferrimagnetic double perovskite material like Sr₂CrMoO₆, which are known for intrinsic tunneling-type negative magnetoresistance. In the thin films, the high carriers’ density (~10²² cm⁻³) and ultrahigh mobility (~10⁴ cm² V⁻¹ s⁻¹) provide a low-resistivity (~10 nΩ·cm) platform for spin-polarized current. Our DFT calculations and magnetic measurements further support the half-metal band structure. The LMR effect in Sr₂CrMoO₆ could possibly originate from transport behavior that is governed by the guiding center motion of cyclotron orbitals, where the magnetic domain structure possibly provides disordered potential. The ultrahigh mobility and LMR in this system could broaden the applications of perovskites, and introduce more research on metallic oxide ferri-/ferro-magnetic materials.

线性磁阻（LMR）是磁场感应电阻率响应的特例，在高度无序的半导体系统和拓扑材料中已有报道。在这项工作中，我们观察到半金属钙钛矿Sr ₂ CrMoO ₆薄膜的LMR效应，在2 K和14 T下，其最大MR值超过+ 1600％。这在诸如Sr _2的亚铁磁性双钙钛矿材料中是不寻常的行为。CrMoO ₆，以本征隧穿型负磁阻而著称。在薄膜中，高载流子密度（〜10 ²²  cm ^-3）和超高迁移率（〜10 ⁴ cm ²  V ^-1  s）^-1）为自旋极化电流提供了低电阻（〜10nΩ·cm）的平台。我们的DFT计算和磁测量结果进一步支持了半金属带结构。Sr ₂ CrMoO _6中的LMR效应可能源自于受回旋轨道的引导中心运动控制的传输行为，其中磁畴结构可能会提供无序电势。该系统中的超高迁移率和LMR可以拓宽钙钛矿的应用范围，并为金属氧化物亚铁/铁磁性材料引入更多的研究。