The investigation of semiconductor films of undoped ZnO and doped with two weight percentages of Cadmium (0.5 and 3) were grown on glass and silicon substrates under the same conditions using the dip-coating method. The X-ray diffraction patterns showed the growth of the wurtzite ZnO phase in a hexagonal crystal structure. Also, the effect of both cadmium concentration and substrate type is very clear, while the films those grown on glass substrate showed a crystallization with a highly c-axis preferred (002) orientation, those grown on a silicon substrate showed regular growth in all directions of the zinc oxide phase. The average crystallites size is of the nano-metric scale, more precise about 27 nm, supported with images taken with Environmental Scanning Electron Microscopy, furthermore from the latter technic (ESEM), we noticed a presence of three morphological types on the surface, were originated according to the substrate type and quantity of Cd-doping. The Rutherford Backscattering Spectrometry simulation spectra and the Auger Electron Spectroscopy by the relation with the stripping time emphasize the subsistence of starting (Zn) and doping (Cd) elements on the final specimens and in proportional quantities, to deduce that the undoped ZnO specimen thin film is the thickest. All the obtained films have an optical transmission of about 80% level within the visible range and a severe absorption beginning about 370 nm corresponding to the fundamental absorption limit, where the optical band gap energy decreased from 3.21 eV to 3.16 eV for the undoped ZnO and doped with 3 wt.% Cd respectively. The room-temperature luminescence emission spectra of all specimens were excited at the same conditions under 250 nm Xenon lamp excitation, where showed ultraviolet and visible emissions for all the films grown on a glass and silicon substrate, while an opposite reaction was recorded in the intensity of the spectra as the percentage of Cd increased.

使用浸涂法在相同条件下，在玻璃和硅基板上生长了未掺杂的ZnO和掺杂有2个重量百分比的镉（0.5和3）的半导体膜。X射线衍射图表明纤锌矿型ZnO相以六方晶体结构生长。而且，镉浓度和衬底类型的影响都非常明显，而在玻璃衬底上生长的膜显示出具有高度c轴优先（002）取向的结晶，而在硅衬底上生长的膜则在所有方向上均显示规则生长的氧化锌相。平均微晶尺寸为纳米级，更精确的约为27 nm，并由环境扫描电子显微镜拍摄的图像提供支持，该图像还来自后一种技术（ESEM），我们注意到表面上存在三种形态类型，这是根据衬底类型和Cd掺杂量而产生的。卢瑟福背散射光谱模拟光谱和俄歇电子能谱与剥离时间的关系强调了最终样品中起始元素（Zn）和掺杂元素（Cd）的存在以及成比例的存在，从而推论出未掺杂的ZnO样品薄膜是最厚的。所有获得的薄膜在可见光范围内的光学透射率约为80％，并且在大约370 nm处开始出现严重吸收，对应于基本吸收极限，其中未掺杂的ZnO和ZnO的光学带隙能量从3.21 eV降低到3.16 eV。分别掺杂3重量％的Cd。