Size-Dependent Insulator-to-Metal and Metal-to-Insulator Phase Transitions in VO2 Microrods Grown on a Silicon Substrate,Physica Status Solidi (A) - Applications and Materials Science

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Size-Dependent Insulator-to-Metal and Metal-to-Insulator Phase Transitions in VO2 Microrods Grown on a Silicon Substrate
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-05-26 , DOI: 10.1002/pssa.202100165
Cyril Koughia ₁ , Ozan Gunes ₁ , Chunzi Zhang ₁ , Shi-Jie Wen ₂ , Qiaoqin Yang ₃ , Safa O. Kasap ₁

Affiliation

Light scattering from VO₂ microrods (MRs) synthesized on a silicon substrate is studied as a function of temperature and wavelength through the insulator-to-metal (IMT) and the metal-to-insulator (MIT) transitions. Light scattering exhibits substantial and reproducible changes. By focusing the light on individual MRs, it is shown that for small-sized MRs (<1 × 10 μm), the IMT and MIT are very sharp with transition temperatures varying within 31–64 °C (IMT) and within 58–76 °C (MIT). In contrast, for large-sized MRs (≈4 × 40 μm), only the IMT at 68 °C is sharp, whereas MIT is stretched with a prominent low-temperature shoulder at 35–50 °C. The observed phenomena are assumed to be connected with the external substrate-induced mechanical stress emerging during the phase transition. A simple model is developed to explain both the temperature-stretched MIT and the low-temperature shoulder.

中文翻译：

在硅衬底上生长的 VO2 微棒中尺寸相关的绝缘体到金属和金属到绝缘体的相变

来自 VO _{2 的}光散射通过绝缘体到金属 (IMT) 和金属到绝缘体 (MIT) 的转变，研究了在硅衬底上合成的微棒 (MR) 作为温度和波长的函数。光散射表现出实质性和可重复的变化。通过将光聚焦在单个 MR 上，表明对于小尺寸 MR（<1 × 10 μm），IMT 和 MIT 非常尖锐，转变温度在 31–64 °C (IMT) 和 58–76 °C 内变化°C (麻省理工学院)。相比之下，对于大尺寸 MR（≈4 × 40 μm），只有 68°C 时的 IMT 是尖锐的，而 MIT 拉伸，在 35-50°C 时具有突出的低温肩。假设观察到的现象与相变期间出现的外部基板引起的机械应力有关。

更新日期：2021-07-22

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