Herein, high-performance solution-processed amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistors (TFTs) with low trap densities due to post-deposition annealing (PDA) are processed with a low-thermal-budget microwave (MW) heat treatment. To verify the MW effectiveness, the composition ratio of a-IGZO thin films and the electrical characteristics of TFTs prepared by conventional thermal annealing (CTA) are compared. An X-ray photoelectron spectroscopy (XPS) analysis reveals that MW annealing (MWA) improves the film quality more effectively than CTA. a-IGZO TFTs treated by MWA or CTA are fabricated to evaluate their electrical characteristics. MWA is more effective than CTA in improving the performance, such as hysteresis, subthreshold swing (SS), field effect mobility (μ _FE), and on/off current ratio (I _on/I _off). MWA provides lower interfacial trap density (D _it) and volume trap density (N _t) than CTA. To evaluate instability, the threshold voltage (V _TH) shift is monitored using positive and negative gate-bias stress tests. MWA demonstrates better reliability than CTA. In conclusion, high-performance solution-based a-IGZO TFTs can be implemented by lowering the charge traps in the a-IGZO channel using MWA.

中文翻译：

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通过低热预算的微波热处理实现具有低电荷陷阱的高性能溶液处理非晶铟镓锌氧化物薄膜晶体管

在此，高性能溶液处理的非晶铟镓锌氧化物 ( a -IGZO) 薄膜晶体管 (TFTs) 由于后沉积退火 (PDA) 而具有低陷阱密度，以低热预算处理微波 (MW) 热处理。为了验证 MW 的有效性，比较了a -IGZO 薄膜的组成比和通过常规热退火 (CTA) 制备的 TFT 的电特性。X 射线光电子能谱 (XPS) 分析表明，MW 退火 (MWA) 比 CTA 更有效地提高了薄膜质量。一种- 制造经过 MWA 或 CTA 处理的 IGZO TFT 以评估其电气特性。MWA 在改善性能方面比 CTA 更有效，例如滞后、亚阈值摆幅 (SS)、场效应迁移率 ( μ _FE ) 和开/关电流比 ( I _on / I _off )。MWA提供较低的界面陷阱密度（d _它）和体积陷阱密度（Ñ _吨比CTA）。为了评估不稳定性，阈值电压 ( V _TH ) 偏移使用正负栅极偏置应力测试进行监控。MWA 表现出比 CTA 更好的可靠性。总之，基于高性能解决方案的-IGZO的TFT可以通过在降低电荷陷阱来实现一个使用MWA -IGZO信道。