FeSe_1−xS_x single crystals with the sulfur content covering the full range (0 ≤ x ≤ 1) have been successfully synthesized through K_0.8Fe₂Se_2−xS_x single crystals as matrix via the controllable and stable hydrothermal ion release method. The lattice parameter c shows monotonically decrease with the increasing sulfur doping content from 5.53 Å for FeSe to 5.03 Å for FeS. The superconducting T_c shows a V-shaped relationship with the sulfur content x with the minimum (∼2 K) located at x ∼ 0.4. Similar with FeSe_1−xS_x thin films on LaAlO₃, the upturn behavior was also observed in ρ-T curves with higher sulfur content (0.32 ≤ x ≤ 0.86) at ambient pressure, and its local minimums (T*) exhibit a domelike dependence of x with the maximum (30 K) occurred at x ∼ 0.5. Simultaneously, Hall coefficients R_H was measured for some single crystals. The R_H of the upturned R_H-T curves also present the local maximums (T_p), which also indicates the presence of antiferromagnetism in higher sulfur content (0.32 ≤ x ≤ 0.86). The similarity between chemical pressure and physical pressure performed on the ρ-T curves and the correspondence between the dome-shaped x-T* and V-shaped x-T_c indicate that the upturns of FeSe_1−xS_x bulk samples with high sulfur content originate from the antiferromagnetic (AFM) order. The doping-temperature (x-T) phase diagram of FeSe_1−xS_x (0 ≤ x ≤ 1) single crystals is obtained, extremely similar to the case of low sulfur doping FeSe under physical high pressure as well as FeSe_1−xS_x thin films on LaAlO₃.

FESE _{1- X}小号_X单晶与硫含量覆盖全范围（0≤ X ≤1）已被成功地至K的合成_0.8的Fe ₂硒_{2- X}小号_X经由可控和热液稳定离子释放单晶作为基质方法。晶格参数c随着硫掺杂含量的增加而单调降低，从FeSe的5.53到FeS的5.03。超导Ť _Ç示出了具有的硫含量的V形关系X与位于最小（〜2 K）X〜0.4。与FeSe相似_{1- X}小号_X上的LaAlO薄膜₃，好转行为中也观察到ρ - Ť曲线具有较高的硫含量（0.32≤ X在环境压力≤0.86），和它的局部最小值（Ť *）表现出圆顶状的依赖性X与最大（30 K）发生在X〜0.5。同时，测量了一些单晶的霍尔系数R _H。所述ř _ħ上翘的ř _ħ - Ť曲线也存在于局部最大值（Ť _p），这也表明反铁磁性的在较高的硫含量（0.32≤存在X ≤0.86）。在ρ - T曲线上进行的化学压力和物理压力之间的相似性以及圆顶形xT *和V形xT _c的对应关系表明，高硫含量的FeSe _{1- x} S _x块状样品的上扬源自反铁磁（AFM）订单。掺杂温度（X - Ť）FESE的相图_{1- X}小号_X（0≤ X≤1）获得单晶，这与在物理高压下低硫掺杂FeSe以及LaAlO ₃上的FeSe _{1- x} S _x薄膜的情况极为相似。