NiO nanocrystals (NCs) thin film is applied as an electron barrier layer (EBL) for red quantum dot light-emitting diodes (QLEDs) to decrease the leakage current and balance the carrier transportation. The optimized NiO-based QLED exhibits the external quantum efficiency (EQE) of 5.85%, current efficiency (CE) of 6.9 cd A⁻¹, with a maximum luminance of 31772 cd m⁻², demonstrating that NiO is an effective EBL for QLEDs. The electron barrier height of 0.031 eV can effectively block 70% electron transport thanks to form the electron trap, grain boundary and depletion layer. The mechanism of the electron transport through NiO EBL is quantum tunneling, which is consistent to Richardson Schottky thermal injection model.

NiO纳米晶体（NCs）薄膜用作红色量子点发光二极管（QLED）的电子阻挡层（EBL），以减少泄漏电流并平衡载流子传输。经过优化的基于NiO的QLED的外部量子效率（EQE）为5.85％，电流效率（CE）为6.9 cd A ^-1，最大亮度为31772 cd m ^-2，这表明NiO是QLED的有效EBL。 。由于形成电子陷阱，晶界和耗尽层，0.031 eV的电子势垒高度可以有效地阻止70％的电子传输。电子通过NiO EBL传输的机理是量子隧穿，这与Richardson Schottky热注入模型一致。