Abstract

A theoretical investigation of intraband nonlinear optical properties of a GaAs quantum well with inversely quadratic Hellman potential have been performed. It considers the presence of external electric and magnetic fields. In addition to this, the effects of the adjustable physical parameters (\(\eta \) and \(V_0\)) of the system on the optical properties of this structure were also investigated. For these numerical calculations, firstly, the conduction subband energy levels and the corresponding wave functions are obtained by solving the Schrödinger equation using the diagonalization method within the framework of effective mass and parabolic band approximations. Based on this information, results of numerical calculations for the linear, third-order nonlinear, and total optical absorption and relative refractive index change coefficients are presented. The obtained numerical results show the increase of the resonance peaks amplitudes with applied external electric and magnetic fields, as well as the shifting of their position the towards higher energies. It was also observed that the variations in \(\eta \) and \(V_0\) have important effects on the magnitude and position of the resonance peaks. We believe that these results can be helpful in the design and practice of the optoelectronic devices used in the terahertz electromagnetic spectrum.

Graphic abstract

中文翻译：

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具有逆二次Hellman势的量子阱的非线性光学性质

摘要

已经对具有逆二次Hellman势的GaAs量子阱的带内非线性光学性质进行了理论研究。它考虑了外部电场和磁场的存在。除此之外，还可调节物理参数（\（\ eta \）和\（V_0 \））的系统对这种结构的光学性能也进行了研究。对于这些数值计算，首先，在有效质量和抛物线带近似的框架内，通过使用对角化方法求解Schrödinger方程，获得传导子带能级和相应的波函数。根据这些信息，给出了线性，三阶非线性，总光吸收和相对折射率变化系数的数值计算结果。所获得的数值结果表明，共振峰幅度随施加的外部电场和磁场的增加而增加，并且它们的位置朝着更高的能量移动。还观察到\（\ eta \）和\（V_0 \）对共振峰的大小和位置有重要影响。我们相信，这些结果有助于太赫兹电磁频谱中使用的光电子器件的设计和实践。

图形摘要