As demand accelerates for multifunctional devices with a small footprint and minimal power consumption, 2.5D and 3D advanced packaging architectures have emerged as an essential solution that use through-substrate vias (TSVs) as vertical interconnects. Vertical stacking enables chip packages with increased functionality, enhanced design versatility, minimal power loss, reduced footprint and high bandwidth. Unlocking the potential of photolithography for vertical interconnect access (VIA) fabrication requires fast and accurate predictive modeling of diffraction effects and resist film photochemistry. This procedure is especially challenging for broad-spectrum exposure systems that use, for example, Hg bulbs with g-, h-, and i-line UV radiation. In this paper, we present new methods and equations for VIA latent image determination in photolithography that are suitable for broad-spectrum exposure and negate the need for complex and time-consuming in situ metrology. Our technique is accurate, converges quickly on the average modern PC and could be readily integrated into photolithography simulation software. We derive a polychromatic light attenuation equation from the Beer-Lambert law, which can be used in a critical exposure dose model to determine the photochemical reaction state. We integrate this equation with an exact scalar diffraction formula to produce a succinct equation comprising a complete coupling between light propagation phenomena and photochemical behavior. We then perform a comparative study between 2D/3D photoresist latent image simulation geometries and directly corresponding experimental data, which demonstrates a highly positive correlation. We anticipate that this technique will be a valuable asset to photolithography, micro- and nano-optical systems and advanced packaging/system integration with applications in technology domains ranging from space to automotive to the Internet of Things (IoT).

随着对小尺寸和最低功耗的多功能设备的需求不断增长，2.5D 和 3D 先进封装架构已成为使用基板通孔 (TSV) 作为垂直互连的重要解决方案。垂直堆叠使芯片封装具有增加的功能、增强的设计多功能性、最小的功耗、减小的占地面积和高带宽。释放光刻在垂直互连接入 (VIA) 制造中的潜力需要对衍射效应和光刻胶膜光化学进行快速、准确的预测建模。此过程对于使用例如带有 g、h 和 i 线紫外线辐射的汞灯泡的广谱曝光系统尤其具有挑战性。在本文中，我们提出了光刻中 VIA 潜像测定的新方法和方程，适用于广谱曝光，并且不需要复杂且耗时的原位计量。我们的技术非常准确，可以在普通现代 PC 上快速收敛，并且可以轻松集成到光刻模拟软件中。我们从比尔-朗伯定律推导出多色光衰减方程，可用于临界曝光剂量模型来确定光化学反应状态。我们将该方程与精确的标量衍射公式结合起来，产生一个简洁的方程，其中包含光传播现象和光化学行为之间的完整耦合。然后，我们对 2D/3D 光刻胶潜像模拟几何形状与直接对应的实验数据进行了比较研究，结果表明存在高度正相关性。 我们预计，这项技术将成为光刻、微米和纳米光学系统以及先进封装/系统集成的宝贵资产，并应用于从太空到汽车到物联网 (IoT) 等技术领域。