As demand accelerates for multifunctional devices with a small footprint and minimal power consumption, 2.5D and 3D advanced packaging architectures have emerged as an essential solution that use through-substrate vias (TSVs) as vertical interconnects. Vertical stacking enables chip packages with increased functionality, enhanced design versatility, minimal power loss, reduced footprint and high bandwidth. Unlocking the potential of photolithography for vertical interconnect access (VIA) fabrication requires fast and accurate predictive modeling of diffraction effects and resist film photochemistry. This procedure is especially challenging for broad-spectrum exposure systems that use, for example, Hg bulbs with g-, h-, and i-line UV radiation. In this paper, we present new methods and equations for VIA latent image determination in photolithography that are suitable for broad-spectrum exposure and negate the need for complex and time-consuming in situ metrology. Our technique is accurate, converges quickly on the average modern PC and could be readily integrated into photolithography simulation software. We derive a polychromatic light attenuation equation from the Beer-Lambert law, which can be used in a critical exposure dose model to determine the photochemical reaction state. We integrate this equation with an exact scalar diffraction formula to produce a succinct equation comprising a complete coupling between light propagation phenomena and photochemical behavior. We then perform a comparative study between 2D/3D photoresist latent image simulation geometries and directly corresponding experimental data, which demonstrates a highly positive correlation. We anticipate that this technique will be a valuable asset to photolithography, micro- and nano-optical systems and advanced packaging/system integration with applications in technology domains ranging from space to automotive to the Internet of Things (IoT).

随着对具有小尺寸和最低功耗的多功能设备的需求加速，2.5D 和 3D 高级封装架构已成为使用衬底通孔 (TSV) 作为垂直互连的基本解决方案。垂直堆叠使芯片封装具有更多的功能、增强的设计多功能性、最小的功率损耗、减少的占用空间和高带宽。释放光刻技术在垂直互连通路 (VIA) 制造中的潜力需要对衍射效应和抗蚀剂膜光化学进行快速准确的预测建模。对于使用具有 g-、h- 和 i-线紫外线辐射的汞灯泡等广谱曝光系统，此过程尤其具有挑战性。在本文中，我们提出了适用于广谱曝光的光刻法中 VIA 潜像测定的新方法和方程，无需复杂且耗时的原位测量。我们的技术是准确的，可以在普通现代 PC 上快速收敛，并且可以很容易地集成到光刻模拟软件中。我们从 Beer-Lambert 定律推导出多色光衰减方程，该方程可用于临界曝光剂量模型，以确定光化学反应状态。我们将该方程与精确的标量衍射公式相结合，以产生一个简洁的方程，其中包含光传播现象和光化学行为之间的完整耦合。然后，我们在 2D/3D 光刻胶潜像模拟几何形状和直接对应的实验数据之间进行了比较研究，这证明了高度正相关。我们预计，这项技术将成为光刻、微米和纳米光学系统以及先进封装/系统集成的宝贵资产，以及从太空到汽车再到物联网 (IoT) 等技术领域的应用。