Microwave irradiation was used to create Sn-(5%, 10%, and 15%) doped CdO nanostructures. XRD, FTIR, UV–vis spectra, SEM, EDX, and TEM were used to investigate structural, vibrational, surface morphological, and optical properties of CdO and Tin doped CdO nanostructures. The phase and structure of pure and Tin doped nanostructures are verified by the XRD profile. Debye Scherrer's method was used to measure the mean crystallite sizes of CdO and Tin doped CdO nanostructures. It shows that as the concentration of Sn doping increases, the crystallite size decreases. SEM was used to observe the impact of Tin doping on surface morphology. EDX confirms the existence of Sn, Cd, and O elements in all of the samples. The presence of chemical bonding in various nanostructures is confirmed by a Fourier transform infrared spectrum. With more Sn doping, the optical band gap varied from 1.94 to 1.69 eV. The electric measurement was carried out for all the samples using Hall setup and two probe methods. CdO doped with 10% of Sn samples exhibits better electrical property than the other samples.

微波辐射用于制造 Sn（5%、10% 和 15%）掺杂的 CdO 纳米结构。XRD、FTIR、UV-vis 光谱、SEM、EDX 和 TEM 用于研究 CdO 和锡掺杂的 CdO 纳米结构的结构、振动、表面形态和光学性质。纯纳米结构和掺锡纳米结构的相和结构通过 XRD 谱进行验证。Debye Scherrer 的方法用于测量 CdO 和锡掺杂的 CdO 纳米结构的平均微晶尺寸。结果表明，随着 Sn 掺杂浓度的增加，晶粒尺寸减小。SEM用于观察锡掺杂对表面形貌的影响。EDX 确认所有样品中都存在 Sn、Cd 和 O 元素。傅里叶变换红外光谱证实了各种纳米结构中化学键的存在。随着更多的Sn掺杂，光学带隙从 1.94 到 1.69 eV。使用霍尔装置和两种探针方法对所有样品进行电测量。掺杂 10% Sn 样品的 CdO 表现出比其他样品更好的电性能。