Abstract

The formation of β-Si₃N₄ for subsequent growth of AlGaN and GaN heterostructures of silicon wafers has been studied. It is established that the native oxide layer protects the silicon surface from the formation of amorphous silicon nitride when heating in an ammonia flow. Controlled formation of β-Si₃N₄ at partial ammonia pressures up to 3 × 10^–5 Torr is demonstrated. This circumstance makes it possible to perform epitaxy of nitride films without cleaning the growth chamber from ammonia, which is usually required to remove the native silicon oxide by high-vacuum annealing.

中文翻译：

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氨流中天然氧化硅晶片上β-Si3N4的受控形成

摘要

的β型Si形成₃ Ñ ₄为硅晶片的AlGaN和GaN异质结构的随后的生长进行了研究。已经确定，当在氨流中加热时，天然氧化物层保护硅表面免于形成非晶氮化硅。β型Si的受控形成₃ Ñ ₄在氨分压力高达3×10 ^-5乇是证明。这种情况使得可以进行氮化物膜的外延而无需从氨中清洗生长室，氨通常是通过高真空退火去除天然氧化硅所必需的。