Recent advances in CMOS scaling have made circuits more and more sensitive to errors and dysfunction caused by ionizing radiation, even at ground level, requiring accurate modeling of such effects. Besides generation, transport, and collection of radiation-induced excess carriers, another phenomenon, called funneling, has to be modeled for an accurate prediction of soft errors. The funneling effect occurs when the radiation track crosses a space charge region and generates excess carriers with a density higher than the doping close to it. These carriers distort the electric field of the space charge region, deeply changing the transport mechanism, from diffusion in a field-free semiconductor to drift. The objective of this work is to include funneling as part of the generalized lumped devices model in order to obtain a complete tool for SPICE-compatible simulations of single-event effects (SEEs). The latter approach has been recently proposed to simulate radiation-induced charges in the silicon substrate and is based on the so-called generalized lumped devices that simulate charge generation, propagation, and collection using standard circuit simulators. The generalized devices are here extended to include funneling and used to simulate an alpha particle impinging on the bulk of nMOS and pMOS transistors. The results obtained are validated with TCAD numerical simulations. Finally, an static random-access memory (SRAM) struck by an alpha particle is analyzed. The model predicts that the occurrence of a soft error, i.e., flipping of memory state, may depend on whether or not there is funneling. This justifies the need for accurate modeling of funneling phenomena to predict SEEs in ICs.

中文翻译：

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使用通用设备对漏斗效应进行建模以进行软错误的 SPICE 仿真


CMOS 缩放的最新进展使得电路对电离辐射引起的错误和功能障碍越来越敏感，即使是在地面，也需要对此类效应进行精确建模。除了辐射引起的过量载流子的产生、传输和收集之外，还必须对另一种称为漏斗的现象进行建模，以准确预测软错误。当辐射轨迹穿过空间电荷区域并产生密度高于其附近掺杂密度的过量载流子时，就会发生漏斗效应。这些载流子扭曲了空间电荷区域的电场，深刻地改变了输运机制，从无场半导体中的扩散到漂移。这项工作的目标是将漏斗作为广义集总器件模型的一部分，以获得用于 SPICE 兼容的单粒子效应 (SEE) 仿真的完整工具。后一种方法最近被提出来模拟硅基板中的辐射感应电荷，并且基于所谓的广义集总器件，该器件使用标准电路模拟器来模拟电荷生成、传播和收集。广义设备在此扩展为包括漏斗并用于模拟 α 粒子撞击大量 nMOS 和 pMOS 晶体管。获得的结果通过 TCAD 数值模拟进行了验证。最后，分析了被阿尔法粒子撞击的静态随机存取存储器（SRAM）。该模型预测软错误（即内存状态翻转）的发生可能取决于是否存在漏斗。这证明需要对漏斗现象进行准确建模以预测 IC 中的 SEE。