In this article, we report the temperature-dependent transistor characteristic of Epi-Gd2O3/AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) and compare its properties with that of AlGaN/GaN metal-Schottky high electron mobility transistor (HEMT) grown on 150 mm Si (111) substrate. Introducing an epitaxial single crystalline Gd2O3 between the metal gate and AlGaN barrier not only improves the gate leakage current significantly but also enhances its thermal stability. We observe that there is no significant change in the gate leakage current even at 473 K compared to that measured at room temperature (RT) (298 K), and this is also evident in the transistor's subthreshold behavior at 473 K. We have determined the electric field within the Gd2O3 as well as AlGaN and investigated the leakage conduction mechanism through Gd2O3. The I ON/I OFF of the transistor was measured as high as ~108 even at 473 K with the lowest VTH shift (91.4 mV) with temperature. Our measurements also confirm the presence of polar optical phonon scattering, which directly affects the 2-D electron gas (2DEG) mobility at high temperatures and thus the electrical characteristics of HEMT and MOSHEMT.

中文翻译：

---

Epi-Gd钪侽钪-MOSHEMT：利用 AlGaN/GaN/Si HEMT 应用的潜在解决方案，具有改进的 I ON/I OFF，工作温度为 473 K


在本文中，我们报告了 Epi-Gd2O3/AlGaN/GaN 金属氧化物半导体高电子迁移率晶体管 (MOSHEMT) 的温度相关晶体管特性，并将其性能与 AlGaN/GaN 金属肖特基高电子迁移率晶体管 (HEMT) 进行了比较生长在 150 mm Si (111) 衬底上。在金属栅极和AlGaN势垒之间引入外延单晶Gd2O3不仅可以显着改善栅极漏电流，还可以增强其热稳定性。我们观察到，与室温 (RT) (298 K) 下测量的栅极漏电流相比，即使在 473 K 下栅极漏电流也没有显着变化，这在 473 K 下晶体管的亚阈值行为中也很明显。我们研究了 Gd2O3 和 AlGaN 内的电场，并研究了 Gd2O3 的漏电传导机制。即使在 473 K 下，测得晶体管的 I ON/I OFF 也高达 ~108，且随温度变化的 VTH 偏移最低 (91.4 mV)。我们的测量还证实了极性光学声子散射的存在，它直接影响高温下的二维电子气 (2DEG) 迁移率，从而影响 HEMT 和 MOSHEMT 的电特性。