In this article, we have systematically investigated the effect of annealing of fabricated GaN Schottky barrier diodes (SBDs) and anode metals with various work-functions on the performance of AlGaN/GaN SBDs. It is found that after annealing of fabricated GaN SBDs, the interface states between the metal and GaN etching surface are suppressed, the device stability is enhanced, and the turn-on voltage ( ${\mathrm {V}}_{ \mathrm{\scriptscriptstyle ON}}$ ) shows negligible degradation. Meanwhile, high-performance AlGaN/GaN SBDs with various work-function metals as anode have been achieved by adapting the annealing treatment. The calculated Schottky barrier heights of the fabricated SBDs with Cr, W, and Ni anode is 0.27, 0.68, and 0.98 eV, respectively, which are almost the same as those estimated from XPS measurements. A low turn-on voltage of 0.42 V and low leakage current of $0.3~\mu \text{A}$ /mm are obtained by using the low work-function metal W (4.6 eV) as anode. Furthermore, the SBDs fabricated with the high work-function metal Ni (5.1 eV) shows an extremely low-leakage current of 6 nA/mm and exhibit a current ON/OFF ratio of $10^{{9}}$ while also showing great characteristics at high temperature.

中文翻译：

---

不同功函数金属的 AlGaN/GaN 肖特基势垒二极管的综合退火效应


在本文中，我们系统地研究了制造的 GaN 肖特基势垒二极管 (SBD) 和具有不同功函数的阳极金属的退火对 AlGaN/GaN SBD 性能的影响。研究发现，制作的GaN SBD经过退火后，金属与GaN刻蚀表面之间的界面态受到抑制，器件稳定性增强，开启电压( ${\mathrm {V}}_{ \mathrm{ \scriptscriptstyle ON}}$ ）显示的退化可以忽略不计。同时，通过采用退火处理，获得了以各种功函数金属为阳极的高性能AlGaN/GaN SBD。计算出的带有 Cr、W 和 Ni 阳极的 SBD 的肖特基势垒高度分别为 0.27、0.68 和 0.98 eV，这与 XPS 测量估计的肖特基势垒高度几乎相同。采用低功函数金属W（4.6 eV）作为阳极，获得0.42 V的低开启电压和$0.3~\mu \text{A}$ /mm的低漏电流。此外，用高功函数金属 Ni (5.1 eV) 制造的 SBD 表现出 6 nA/mm 的极低漏电流，并表现出 10^{{9}}$ 的电流开/关比，同时还表现出出色的性能。高温下的特性。