This article demonstrates the integrated comparators, hysteresis comparators, and sawtooth generators based on aluminum–gallium–nitride/gallium–nitride (AlGaN/GaN) metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The integrated circuits (ICs) exhibit thermal stability from 25 °C to 250 °C in both static and transient performances. The threshold voltage ( ${V}{_{\text {th}}}$ ) in depletion (D)-mode MIS-HEMT is modulated from −8.9 to −2.4 V to optimize the performance of integrated comparator circuits. The comparator can realize a large and stable comparison range of 3–9 V and a high voltage swing of 9.1 V, while the hysteresis comparator exhibits a good noise-immunity ability and stable hysteresis output. The sawtooth generator with the hysteresis comparator features a high amplitude (6.1 V) sawtooth signal at 500 kHz to realize a compact structure applicable to the high-voltage mixed-signal circuits. These results show the feasibility of MIS-HEMT monolithic comparator circuits in conversion systems.

中文翻译：

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具有高温阈值电压调制功能的AlGaN / GaN MIS-HEMT的单片比较器和锯齿波发生器

本文演示了基于铝-氮化镓/氮化镓（AlGaN / GaN）金属-绝缘体-半导体高电子迁移率晶体管（MIS-HEMT）的集成比较器，磁滞比较器和锯齿波发生器。集成电路（IC）在静态和瞬态性能方面均表现出从25°C到250°C的热稳定性。阈值电压（ $ {V} {_ {\ text {th}}} $ ），在耗尽（D）模式下，MIS-HEMT的调制范围为-8.9 V至-2.4 V，以优化集成比较器电路的性能。该比较器可以实现3–9 V的较大且稳定的比较范围，以及9.1 V的高电压摆幅，而磁滞比较器则具有良好的抗噪声能力和稳定的磁滞输出。具有迟滞比较器的锯齿波发生器具有500 kHz的高幅度（6.1 V）锯齿波信号，可实现适用于高压混合信号电路的紧凑结构。这些结果表明了MIS-HEMT单片比较器电路在转换系统中的可行性。