We present a nonvolatile resistive-gate metal-oxide-semiconductor-field-effect transistor (RG-MOSFET). An RG-MOSFET comprises a MOSFET and dielectric layers sandwiched between the top and bottom electrode metal-dielectric-metal (MDM). The gate of the MOSFET is electrically connected to the bottom electrode of MDM in series. Dielectric layers of MDM are composed of a resistance-switching layer made by hafnium oxynitride (HfON) and a resistance-nonswitching layer by hafnium dioxide (HfO2). RG-MOSFET as a memory can be achieved by resistance changes in the HfON. Eight distinguishable resistance values can be programmed randomly, which is performed as a 3 bit per cell through the edge Fowler-Nordheim (FN) mechanism between the top electrode metal and the drain of RG-MOSFET. The external voltage applied to the top electrode is divided by the MDM and the gate dielectric, and the threshold voltage (Vth) of an RG-MOSFET is modulated by different resistance values of MDM. Therefore, states stored in MDM can be read out from the drain-current level of an RG-MOSFET. FORMing-free characteristic of MDM is required for bipolar operation. A ratio of drain current between the high-resistance state (HRS) and the low-resistance state (LRS) is 10510^{{5}} . Gradual SET/RESET is executed to tune the drain current by pulse operations; 10510^{{5}} endurance cycles of RG-MOSFETs are demonstrated, and a retention test can be passed for more than 5 ×106 (35 days) at 125 °C.

中文翻译：

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具有每单元 3 位存储能力的无成型 HfO2/HfON 电阻栅金属氧化物半导体场效应晶体管 (RG-MOSFET) 非易失性存储器


我们提出了一种非易失性电阻栅极金属氧化物半导体场效应晶体管（RG-MOSFET）。 RG-MOSFET 包括 MOSFET 和夹在顶部和底部电极金属-电介质-金属 (MDM) 之间的电介质层。 MOSFET的栅极与MDM的底部电极串联电连接。 MDM 的介电层由氮氧化铪 (HfON) 制成的电阻切换层和二氧化铪 (HfO2) 制成的电阻非切换层组成。 RG-MOSFET作为存储器可以通过HfON的电阻变化来实现。可以对八个可区分的电阻值进行随机编程，通过顶部电极金属和 RG-MOSFET 漏极之间的边缘 Fowler-Nordheim (FN) 机制以每单元 3 位的方式进行编程。施加到顶部电极的外部电压由MDM和栅极电介质分压，并且RG-MOSFET的阈值电压(Vth)由MDM的不同电阻值调制。因此，可以从 RG-MOSFET 的漏极电流电平读出 MDM 中存储的状态。双极操作需要 MDM 的无成型特性。高电阻状态(HRS)和低电阻状态(LRS)之间的漏极电流的比率是10510^{{5}}。执行渐进式SET/RESET，通过脉冲操作调整漏极电流；展示了 RG-MOSFET 的 10510^{{5}} 耐久性循环，并且可以在 125 °C 下通过超过 5 ×106（35 天）的保持测试。