In this article, an L-shaped tunnel field-effect transistor (LTFET)-based one-transistor dynamic random access memory (1T DRAM) with SiGe storage region was demonstrated through 2-D TCAD simulations. The SiGe storage is utilized to boost not only the sense margin (SM) but also the retention time (RT) in comparison to the previously published TFET-based 1T DRAMs. The simulation results reveal that the LTFET 1T DRAM acquired the SM of $6.2~\mu \text{A}/\mu \text{m}$ with RT of 1.7 s when 50-nm gate length was adopted at 27 °C, whereas at 85 °C, the LTFET 1T DRAM attains the SM and RT of $5.1~\mu \text{A}/\mu \text{m}$ and 290 ms, respectively. Furthermore, the LTFET 1T DRAM still attains the RT of 1.3 s at 27 °C when the gate length is scaled down to 20 nm. Thus, LTFET 1T DRAM exhibits a better gate length scalability in comparison to the counterpart TFET-based 1T DRAMs. In addition, we observed that the impact of ion irradiation on the proposed cell exhibits almost the same SM before and after the ion strike.

中文翻译：

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基于 L 形隧道场效应晶体管的 1T DRAM，具有改进的读取电流比、保留时间和感应裕度


在本文中，通过 2-D TCAD 仿真演示了一种具有 SiGe 存储区域的基于 L 形隧道场效应晶体管 (LTFET) 的单晶体管动态随机存取存储器 (1T DRAM)。与之前发布的基于 TFET 的 1T DRAM 相比，SiGe 存储不仅可以提高感应裕度 (SM)，还可以提高保留时间 (RT)。仿真结果表明，在 27 °C 下采用 50 nm 栅极长度时，LTFET 1T DRAM 获得了 $6.2~\mu \text{A}/\mu \text{m}$ 的 SM，RT 为 1.7 s，而在 85 °C 时，LTFET 1T DRAM 的 SM 和 RT 分别为 $5.1~\mu \text{A}/\mu \text{m}$ 和 290 ms。此外，当栅极长度缩小至 20 nm 时，LTFET 1T DRAM 在 27 °C 时仍能达到 1.3 s 的 RT。因此，与基于 TFET 的 1T DRAM 相比，LTFET 1T DRAM 表现出更好的栅极长度可扩展性。此外，我们观察到离子照射对所提出的细胞的影响在离子撞击之前和之后表现出几乎相同的 SM。