This study investigates how ambient/carrier gases affect the material characteristics of amorphous indium–gallium–zinc oxide (a-InGaZnO) thin films deposited using the ultrasonic spray pyrolysis deposition (USPD) method. Nitrogen and air are used as the ambient/carrier gases in this study. The crystallinity, oxygen deficiency, energy bandgap, and trap level in the a-InGaZnO thin films are analyzed. The performance of the thin-film transistors (TFTs) based on a-InGaZnO with different ambient/carrier gases is investigated as well. It is found that oxygen deficiency is suppressed when air is used as the ambient/carrier gas. When nitrogen is used as the ambient/carrier gas to deposit a-InGaZnO thin film, the TFT shows higher field-effect mobility and saturation mobility. However, when the a-InGaZnO thin film is deposited with air as the ambient/carrier gas, the subthreshold swing, ON-/ OFF-current ratio, interface trap density, and stability of the TFT are improved. This study demonstrates how ambient/carrier gases in the USPD system affect the performance of a-InGaZnO TFT.

中文翻译：

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利用超声波喷雾热解沉积研究环境/载气对非晶 InGaZnO 基薄膜晶体管的影响


本研究研究了环境/载气如何影响使用超声波喷雾热解沉积 (USPD) 方法沉积的非晶态氧化铟镓锌 (a-InGaZnO) 薄膜的材料特性。本研究中使用氮气和空气作为环境/载气。分析了 a-InGaZnO 薄膜的结晶度、氧缺陷、能带隙和陷阱能级。还研究了基于 a-InGaZnO 的薄膜晶体管 (TFT) 在不同环境/载气下的性能。发现当使用空气作为环境/载气时，可以抑制缺氧。当使用氮气作为环境/载气沉积a-InGaZnO薄膜时，TFT表现出更高的场效应迁移率和饱和迁移率。然而，当使用空气作为环境/载气沉积a-InGaZnO薄膜时，TFT的亚阈值摆幅、开/关电流比、界面陷阱密度和稳定性得到改善。本研究展示了 USPD 系统中的环境/载气如何影响 a-InGaZnO TFT 的性能。