Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) gated with sputtered silicon dioxide dielectric were fabricated. Under different sputtering pressures of silicon dioxide, the device is able to produce transfer curves from clockwise hysteresis to anticlockwise hysteresis, corresponding to different operation modes and thus adding complementary performance by the same material system and device structure. In the interface trapping mode, the transistor exhibited inhibitory synaptic spiking behavior induced by positive stimuli. In the electric double-layer coupling mode, positive stimuli led to excitatory synaptic spiking behavior, while negative stimuli resulted in inhibitory synaptic spiking behavior. All the transistor and synaptic spiking behaviors are conducted within ±1 V range. Enriched functionality and ultralow operation voltage make sputtered SiO 2 -gated IGZO TFTs promising candidate for neuromorphic applications.

中文翻译：

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溅射氧化物薄膜晶体管在 1 V 下具有可调谐突触尖峰行为


制造了采用溅射二氧化硅电介质选通的氧化铟镓锌 (IGZO) 薄膜晶体管 (TFT)。在不同的二氧化硅溅射压力下，该器件能够产生从顺时针磁滞到逆时针磁滞的传递曲线，对应不同的工作模式，从而使相同的材料体系和器件结构具有互补的性能。在界面捕获模式下，晶体管表现出由正刺激引起的抑制性突触尖峰行为。在电双层耦合模式下，正刺激导致兴奋性突触尖峰行为，而负刺激导致抑制性突触尖峰行为。所有晶体管和突触尖峰行为均在 ±1 V 范围内进行。丰富的功能和超低工作电压使溅射 SiO 2 门控 IGZO TFT 成为神经形态应用的有希望的候选者。