In this article, in addition to two commonly known noise parameters—dark count rate (DCR) and afterpulsing (AP)—we explore another interesting phenomenon–random telegraph signal (RTS) noise—during the transitional phase of the avalanching process. We present the properties of the RTS noise and their dependence on the biasing voltage and temperature. An analytical model is used to extract the dimension of the defects in the depletion region from the variation of the RTS noise current amplitude with biasing voltage. By comparing the DCR and AP of single-photon avalanche diode (SPAD) samples with different defect dimensions derived from the RTS noise properties, a trend that the SPAD with a larger defect dimension shows a higher DCR and AP is found.

中文翻译：

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n+/p 阱 CMOS 单光子雪崩二极管中的随机电报信号


在本文中，除了两个众所周知的噪声参数——暗计数率（DCR）和后脉冲（AP）之外，我们还探讨了雪崩过程过渡阶段的另一个有趣现象——随机电报信号（RTS）噪声。我们介绍了 RTS 噪声的特性及其对偏置电压和温度的依赖性。使用分析模型从 RTS 噪声电流幅度随偏置电压的变化中提取耗尽区中缺陷的尺寸。通过比较由 RTS 噪声特性得出的具有不同缺陷尺寸的单光子雪崩二极管 (SPAD) 样品的 DCR 和 AP，发现缺陷尺寸较大的 SPAD 表现出较高的 DCR 和 AP 的趋势。