The article presents a new design of an AlGaAs/GaAs low-voltage thyristor for efficient high-current pulse generation at high repetition rates. It is demonstrated that optimizing the low-voltage thyristor p-base doping profile by using a thin highly doped layer allows for a significant increase in the operating frequencies. This applies to both a thyristor working without an external load and a vertical stack of a thyristor with a laser diode mini bar (LDMB). It is shown that the use of a 0.1- μm\mu \text{m} -thick highly doped layer, formed at the side of the p-base close to the n-emitter, leads to a significant increase of the holding current, which in our case exceeds 70 mA. At the same time, we were still able to obtain a low residual voltage of 1.5 V and a high blocking voltage of 32 V. The developed low-voltage thyristors have demonstrated the possibility of generating current pulses of 30-ns duration at a repetition rate of 10/70 kHz with an amplitude of 125/110 A, as well as the efficient pumping of LDMBs and laser pulses with a peak power of 68/57.5 W, respectively.

中文翻译：

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用于高重复率高电流脉冲生成的低压晶闸管异质结构


本文介绍了一种新的 AlGaAs/GaAs 低压晶闸管设计，可在高重复率下高效产生高电流脉冲。事实证明，通过使用薄的高掺杂层来优化低压晶闸管 p 基极掺杂分布可以显着提高工作频率。这既适用于无外部负载工作的晶闸管，也适用于带有激光二极管迷你棒 (LDMB) 的晶闸管垂直堆叠。结果表明，使用在靠近 n 发射极的 p 基极一侧形成的 0.1 μm\mu \text{m} 厚的高掺杂层会导致保持电流显着增加，在我们的例子中超过 70 mA。同时，我们仍然能够获得 1.5 V 的低残余电压和 32 V 的高阻断电压。所开发的低压晶闸管已证明能够以重复率生成持续时间为 30 ns 的电流脉冲10/70 kHz、振幅 125/110 A，以及 LDMB 和激光脉冲的有效泵浦，峰值功率分别为 68/57.5 W。