High-performance AlGaN/GaN lateral Schottky barrier diodes (SBDs) with recess structure and dual metal nitride anodes were demonstrated. With high work-function and nonrecess structure, a NiN anode enhances the breakdown voltage (BV), while a TiN anode reduces the turn-on voltage (VON) due to its low work-function and contact to the two-dimensional electron gas (2DEG) layer directly on a recess structure. As the length of the NiN anode ( Lr) on the nonrecess region decreases from 75 to 3 μm, VON is reduced from 0.56 to 0.30 V, while the reverse leakage current slightly increases from 3 ×10-4 to 2 ×10-3 A/cm2 at the bias of -10 V. The lateral AlGaN/GaN SBD with a Lr of 3 μm at a distance of cathode-anode ( LAC) of 20 μm achieves a high BV of 1.62 kV, an ultralow VON of 0.30 V and a small capacitance of 6.0 pF at zero bias with little degradation on ON-resistance, indicating superior potential application in high-frequency and high-power devices.

中文翻译：

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具有 TiN 和 NiN 双阳极的嵌入式 AlGaN/GaN 肖特基势垒二极管


展示了具有凹槽结构和双金属氮化物阳极的高性能 AlGaN/GaN 横向肖特基势垒二极管 (SBD)。凭借高功函数和非凹陷结构，NiN 阳极提高了击穿电压 (BV)，而 TiN 阳极由于其低功函数和与二维电子气的接触而降低了导通电压 (VON)。 2DEG）层直接位于凹槽结构上。随着非凹陷区域的 NiN 阳极 (Lr) 的长度从 75 μm 减小到 3 μm，VON 从 0.56 V 减小到 0.30 V，而反向漏电流从 3 ×10-4 略微增加到 2 ×10-3 A /cm2，偏压为-10 V。Lr为3 μm的横向AlGaN/GaN SBD在阴极-阳极距离（LAC）为20 μm时实现了1.62 kV的高BV、0.30 V的超低VON和零偏压时具有 6.0 pF 的小电容，导通电阻几乎没有下降，表明在高频和大功率器件中具有优异的潜在应用。