The effect of atomic-layer-deposition (ALD)-derived Al ₂ O ₃ passivation layer on the interface quality of Er ₂ O ₃ /Al ₂ O ₃ /InP laminated stacks and the improvement of electrical performance has been investigated systematically. The chemical bonding states measured by high-resolution X-ray photoelectron spectroscopy (XPS) reveal that the ALD-derived Al ₂ O ₃ passivation layer can effectively inhibit the diffusion of substrate elements to optimize the interface quality. Electrical characterizations show that the optimized sample has demonstrated improved electrical properties, including the large dielectric constant of 20 and the suppressed leakage current density of $4.10\times 10^{-7}$ cm ² . In addition, the leakage current conduction mechanisms are also investigated as a function of thickness of Al ₂ O ₃ passivation layer. The optimized interface state density extracted from the conductance method has reduced from $1.30 \times 10^{12}$ eV ⁻¹ cm ² of Er ₂ O ₃ /InP to $7.27 \times 10^{11}$ eV ⁻¹ cm ² of Er ₂ O ₃ /Al ₂ O ₃ /InP by adjusting the passivation layer thickness. As a result, it can be also confirmed that the passivation treatment is beneficial to inhibit the element’s diffusion and optimize the interface quality, significantly controlling the capacitor degradation caused by the leakage current through the stacked oxide layer.

中文翻译：

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钝化 Er2O3/Al2O3/InP MOS 电容器的界面优化及漏电流传导机制的调制


系统研究了原子层沉积（ALD）衍生的Al ₂ O ₃钝化层对Er ₂ O ₃ /Al ₂ O ₃ /InP叠层堆界面质量的影响以及电性能的改善。通过高分辨率X射线光电子能谱（XPS）测量的化学键态表明，ALD衍生的Al ₂ O ₃钝化层可以有效抑制基材元素的扩散，从而优化界面质量。电气特性表明，优化后的样品具有改善的电气性能，包括20的大介电常数和4.10\times 10^{-7}$ cm ²的抑制漏电流密度。此外，还研究了漏电流传导机制作为Al ₂ O ₃钝化层厚度的函数。电导法提取的优化界面态密度从Er ₂ O ₃ /InP的$1.30 \times 10^{12}$ eV ^-1 cm ²降低到$7.27 \times 10^{11}$ eV ^-1 cm ²通过调节钝化层厚度来调节Er ₂ O ₃ /Al ₂ O ₃ /InP。由此也可以证实，钝化处理有利于抑制元素扩散并优化界面质量，显着控制因堆叠氧化物层漏电流而导致的电容器劣化。