In this work, a novel 3-D equivalent circuit model of thermoelectric microelectro-mechanical system (MEMS) microwave power sensor is proposed. According to the model, the 3-D temperature distribution and the response time of the thermoelectric MEMS microwave power sensor are obtained. The thermoelectric MEMS microwave power sensor is designed and fabricated based on GaAs monolithic microwave integrated circuit (MMIC) technology. The measured results show that the sensitivity of the sensor is 0.06 mV/mW at 10 GHz and the time constant is 85 μs. The theoretical results of the model show that the sensitivity is 0.076 mV/mW at 10 GHz and the time constant is 56.24 μs. The measured results are relatively consistent with the theoretical results. Furthermore, the heat dissipation in the substrate can be obtained accurately, and the transient response of the sensor can be further studied according to the 3-D equivalent circuit model. Therefore, this work has a certain reference value and guiding significance for the research of thermoelectric MEMS microwave power sensors.

中文翻译：

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热电 MEMS 微波功率传感器的新型 3D 等效电路模型


在这项工作中，提出了一种新型热电微机电系统（MEMS）微波功率传感器的3D等效电路模型。根据该模型，获得了热电MEMS微波功率传感器的3维温度分布和响应时间。热电MEMS微波功率传感器是基于GaAs单片微波集成电路（MMIC）技术设计和制造的。测量结果表明，传感器在10 GHz时的灵敏度为0.06 mV/mW，时间常数为85 μs。模型的理论结果表明，在10 GHz时灵敏度为0.076 mV/mW，时间常数为56.24 μs。测量结果与理论结果比较吻合。此外，可以准确获得基板中的散热情况，并可以根据3D等效电路模型进一步研究传感器的瞬态响应。因此，本工作对于热电MEMS微波功率传感器的研究具有一定的参考价值和指导意义。