Antiferroelectrics are famous for their unique electric field-induced phase transition polarization behavior, which have a wide application in the fields of power electronics and electrical engineering. In this work, Al₂O₃ and PbZrO₃ films are chosen as the insulator and antiferroelectric, respectively, and the multilayer thin films are fabricated by chemical solution method. The microstructure and electrical performances are systematically investigated. The results demonstrate that antiferroelectric-insulator multilayer films exhibit remarkable ferroelectricity which may be induced by the self-polarization effect. The constructed PbZrO₃/Al₂O₃ bilayer films accompany an amazing remanent polarization of 43 μC/cm², and the PbZrO₃/Al₂O₃/PbZrO₃ trilayer films possess excellent energy storage performance. The values of recoverable energy storage density of 32.6 J/cm³ and efficiency of 88.1% are obtained for trilayer films annealed at 550 °C, meaning that the design of antiferroelectric-insulator multilayer structure is an effective approach to regulate polarization behaviors and enables the films to have excellent energy storage performances.

反铁电体以其独特的电场诱导相变极化行为而闻名，在电力电子和电气工程领域有着广泛的应用。在这项工作中，分别选择Al ₂ O ₃和PbZrO ₃薄膜作为绝缘体和反铁电体，并通过化学溶液法制备多层薄膜。系统地研究了微观结构和电性能。结果表明，反铁电绝缘体多层膜表现出显着的铁电性，这可能是由于自极化效应引起的。构建的PbZrO ₃ /Al ₂ O ₃双层薄膜伴随着惊人的43 μC/cm ²剩余极化，PbZrO ₃ /Al ₂ O ₃ /PbZrO ₃三层薄膜具有优异的储能性能。32.6 J/cm ³的可恢复能量存储密度值和 88.1% 的效率在 550 °C 退火的三层薄膜中获得，这意味着反铁电绝缘体多层结构的设计是调节极化行为的有效方法，并使薄膜具有优异的储能性能。