This article reports on the Ar⁺ ion irradiation induced modifications of Co/Alq₃/Si-substrate bilayer thin film. Irradiation was carried out with 10 keV Ar⁺ ions at a fluence of 1 × 10¹⁶ ions/cm². To study structural and magnetic modifications, x-ray reflectivity (XRR) and magneto-optical Kerr effect (MOKE) techniques, respectively have been utilized. XRR analysis reveals a significant reduction of electron density of the Co layer and enhancement of intermixing of Co and Alq₃ at the Co/Alq₃ interface after ion irradiation. MOKE measurements affirm that saturation magnetization reduces by a factor of about 3 due to irradiation without any detectable changes in the coercivity. XRR analysis and Monte Carlo simulation demonstrate the ion irradiation induced defects formation due to Ar implantation and enhancement of interface mixing between Co and Alq₃ is the main cause of the reduction in saturation magnetization.

本文报道了Ar ⁺离子辐照引起的Co / Alq ₃ / Si衬底双层薄膜的改性。用10keV Ar ⁺离子以1×10 ¹⁶离子/ cm ²的通量进行辐照。为了研究结构和磁修饰，分别利用了X射线反射率（XRR）和磁光克尔效应（MOKE）技术。XRR分析表明，Co层的电子密度显着降低，并且Co / Alq ₃处Co和Alq ₃的混合增加离子辐照后的界面。MOKE测量结果确认，由于辐照而导致的饱和磁化强度降低了约3倍，而矫顽力没有任何可检测到的变化。XRR分析和Monte Carlo模拟表明，由于Ar注入而引起的离子辐照引起的缺陷形成以及Co和Alq ₃之间界面混合的增强是饱和磁化强度降低的主要原因。