Individual charge traps in the gate stack of gate-all-around field-effect-transistors have been identified from their random telegraph noise (RTN) characteristics in the time and frequency domains. The energy level and depth location of the corresponding charge traps were extracted from capture/emission time constant and corner frequency. The charge traps were determined to be the excited states of oxygen vacancies in the dielectric located 3 nm away from the interface. Both the time domain and frequency domain RTN measurements lead to an identical result.

中文翻译：

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浮体全栅场效应晶体管中栅堆叠电荷陷阱的电学表征

从时域和频域中的随机电报噪声（RTN）特性可以识别出环栅型场效应晶体管的栅极叠层中的各个电荷陷阱。从捕获/发射时间常数和转折频率中提取相应电荷陷阱的能级和深度位置。电荷陷阱被确定为位于距界面3 nm处的电介质中氧空位的激发态。时域和频域RTN测量均得出相同的结果。