To obtain high performance of GaN-based laser diodes (LDs), three series of LDs are proposed, the effects of Al content of p-AlGaN cladding layer, as well as the material composition and thickness of upper waveguide layer (UWG) are investigated separately. As the Al content increases, the threshold current and output power are found to improve significantly. Meanwhile, the optical field distributed on the p-type side is reduced. Besides, the photoelectric characteristics of LDs are further improved when In_0.03Ga_0.97N/In_0.01Ga_0.99N UWG is used. Moreover, proper choice of the In_0.03Ga_0.97N/In_0.01Ga_0.99N UWG thickness is necessary to achieve the high performance of GaN-based LDs.

中文翻译：

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通过设计 p-AlGaN 包覆层和上波导层提高 GaN 基激光二极管的效率

为了获得高性能的GaN基激光二极管（LDs），提出了三个系列的LDs，研究了p-AlGaN包覆层的Al含量以及上波导层（UWG）的材料成分和厚度的影响分别地。随着Al含量的增加，发现阈值电流和输出功率显着提高。同时，分布在p型侧的光场减小。此外，当使用In _0.03 Ga _0.97 N/In _0.01 Ga _0.99 N UWG时，LDs的光电特性得到进一步改善。Moreover, proper choice of the In _0.03 Ga _0.97 N/In _0.01 Ga _0.99N UWG 厚度是实现基于 GaN 的 LD 的高性能所必需的。