Topological magnetic semimetals, like Co₃Sn₂S₂ and Co₂MnGa, display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt₃ compounds exhibit anti-crossing gapped nodal lines, a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped nodal lines that harmoniously dominate the Berry curvature in this complex multi band system. We calculate a maximum AHE of 1965 S cm^-1 in the CrPt₃ by first principles electronic structure. We have grown high-quality CrPt₃ thin films with perpendicular magnetic anisotropy by magnetron sputtering and measured a robust AHE of 1750 S cm⁻¹ for different sputtering growth conditions. Additionally, the cubic films display an easy magnetic axis along [111] direction. The facile and scalable fabrication of these materials is prime candidates for integration into topological devices.

拓扑磁性半金属（如Co ₃ Sn ₂ S ₂和Co ₂ MnGa）显示出奇异的传输特性，例如由于未补偿的贝里曲率而导致的大固有异常（AHE）。高度对称的X Pt ₃化合物具有抗交叉缺口的节点线，这是固有的浆果曲率霍尔效应的驱动机制。独特的是，这些化合物包含两组带间隙的节点线，这些节点线在这个复杂的多频带系统中和谐地控制了贝里曲率。我们通过第一原理电子结构计算出CrPt _3中的1965 S cm ^-1的最大AHE 。我们已经种植了高质量的CrPt ₃通过磁控溅射具有垂直磁各向异性的薄膜，在不同的溅射生长条件下测得的鲁棒AHE为1750 S cm ^-1。此外，立方薄膜沿[111]方向显示易磁化轴。这些材料的便捷和可扩展制造是集成到拓扑设备中的主要候选人。