In this study, the dV/dt ruggedness of commercial 4H-SiC Schottky diodes C3D02060A (Wolfspeed) with DC blocking voltage of 600 V and continuous forward current of 2 A was investigated. The quasi-static reverse current-voltage characteristics of the diodes were measured in the recoverable avalanche breakdown regime up to currents of about 7 A. The mature avalanche breakdown voltage was measured to be 1180 V which is almost twice the rated blocking voltage of 600 V. The dV/dt tests were performed with the use of a pulse current generator capable of generating short (3 ns), high-current (up to 80 A), high-voltage (up to 4 kV at 50-ohm load) pulses. The dV/dt limit was found to be 1260 V/ns, in combination with the value of diode terminal voltage of 750 V. Based on TCAD simulations, the impact of unavoidable lead inductance of TO-220A package on the dV/dt limit is pointed out. It is shown that a high voltage is induced on semiconductor structure being higher than the voltage on diode external terminals. As a result, diode failure occurs, although the diode terminal voltage is significantly lower than the mature avalanche breakdown voltage of semiconductor structure.

在这项研究中，研究了直流阻断电压为600 V，连续正向电流为2 A的商用4H-SiC肖特基二极管C3D02060A（Wolfspeed）的dV / dt耐用性。在可恢复的雪崩击穿状态下测量二极管的准静态反向电流-电压特性，电流高达7A。成熟的雪崩击穿电压经测量为1180 V，几乎是额定阻断电压600 V的两倍。该的dV / dt的试验是用使用的脉冲电流发生器能够产生短（3纳秒）的高电流（高达80 A），高压（高达50欧姆负载至4千伏）脉冲执行。所述d V / d吨极限值为1260 V / ns，结合二极管端电压为750V。基于TCAD仿真，指出了TO-220A封装不可避免的引线电感对dV / dt极限的影响。可以看出，在半导体结构上感应出的电压高于二极管外部端子上的电压。结果，尽管二极管端子电压明显低于半导体结构的成熟雪崩击穿电压，但仍发生二极管故障。