In this paper, the influence of ageing by PCT (Power Cycling Test) on the hard switching behavior of IGBT (Insulated Gate Bipolar Transistor) devices, especially the current change rate di/dt and voltage change rate dv/dt during the switching process, is investigated with standard DC-PCT and a PCT with superimposed switching losses. 1200 V IGBTs with two different package forms are used for the PCTs to stimulate two common failure modes: discrete devices with the bond wire failures and modules without baseplate to trigger the solder layer degradation. To evaluate the hard switching behavior of the IGBTs, a DPT (double pulse test) is repetitively performed after a specific number of cycles at the same test conditions to determine the influence of power cycling ageing. The experimental results show that the current and voltage transient transitions of IGBT devices during hard switching are independent of the power cycling ageing.

本文研究了PCT（功率循环测试）的老化对IGBT（绝缘栅双极晶体管）器件的硬开关性能的影响，特别是电流变化率d i / d t和电压变化率d v / d t在切换过程中，使用标准DC-PCT和具有叠加切换损耗的PCT进行了研究。PCT使用具有两种不同封装形式的1200 V IGBT来激发两种常见的故障模式：具有键合线故障的分立器件和不带底板的模块以触发焊料层退化。为了评估IGBT的硬开关性能，在相同测试条件下经过特定次数的循环后，重复执行DPT（双脉冲测试），以确定功率循环老化的影响。实验结果表明，硬开关期间IGBT器件的电流和电压瞬态过渡与功率循环老化无关。