当前位置: X-MOL 学术Opt. Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Microstructural and optical properties of Ag assisted β-Ga2O3 nanowires on silicon substrate
Optical Materials ( IF 3.8 ) Pub Date : 2021-05-21 , DOI: 10.1016/j.optmat.2021.111190
Shagolsem Romeo Meitei , Chitralekha Ngangbam , Naorem Khelchand Singh

In this paper, Silver nanoparticle assisted vertically aligned β-Ga2O3 nanowires (Ag NP-β-Ga2O3 NW) were fabricated on Silicon (Si) -substrate by Glancing angle deposition (GLAD) technique. With the integration of Ag NP, the XRD pattern exhibits a reduction in the crystallite size of β-Ga2O3 NW. The EDS analysis confirms the presence of Ag NP, thereby further supporting the XRD result. The SEM image analysis shows a consistency in the size (40–50 nm) of NW growth for Ag NP-β-Ga2O3 NW. The photoluminescence spectra show an enhancement in the Ag NP-β-Ga2O3 NW structure. Lastly, the optical absorption spectra of β-Ga2O3 NW and Ag NP-β-Ga2O3 NW reveals that the presence of Ag NP in β-Ga2O3 NW enhance the photon absorption in the UV and the visible region as compared to β-Ga2O3 NW due to the synergistic action of Ag NP and β-Ga2O3 NW. This study demonstrates that high-quality Ag NP-β-Ga2O3 NW nanostructure can be grown in large quantities for a variety of applications, including photodetector, gas sensor, and power devices applications.



中文翻译:

微观结构和Ag的光学性质辅助的β-Ga 2层ö 3硅衬底上的纳米线

在本文中,辅助的银纳米粒子垂直排列的β-Ga 2个ö 3纳米线(银NP-的β-Ga 2 ö 3 NW)通过掠射角沉积(GLAD)技术制造上硅(Si) -底物。有Ag NP的整合,XRD图案显示出在β-Ga构成的微晶尺寸的减小2 ö 3 NW。EDS分析证实了Ag NP的存在,从而进一步支持了XRD结果。SEM图像分析示出了在NW生长的大小(40-50纳米)的Ag为NP-的β-Ga的稠度2 ö 3 NW。光致发光光谱示出了在银增强NP-的β-Ga 2 ö 3NW结构。最后,的光吸收谱的β-Ga 2 ö 3 NW和Ag NP-的β-Ga 2 ö 3 NW揭示的Ag NP在存在的β-Ga 2 ö 3 NW提高在UV和可见的光子吸收区域相比的β-Ga 2 ö 3 NW由于银NP和β-Ga中的协同作用2 ö 3 NW。这项研究表明,高品质的Ag NP-的β-Ga 2 ö 3 NW纳米结构可以大量生长用于各种应用中,包括光电检测器,气体传感器,和功率器件应用。

更新日期:2021-05-22
down
wechat
bug