In this paper, Silver nanoparticle assisted vertically aligned β-Ga₂O₃ nanowires (Ag NP-β-Ga₂O₃ NW) were fabricated on Silicon (Si) -substrate by Glancing angle deposition (GLAD) technique. With the integration of Ag NP, the XRD pattern exhibits a reduction in the crystallite size of β-Ga₂O₃ NW. The EDS analysis confirms the presence of Ag NP, thereby further supporting the XRD result. The SEM image analysis shows a consistency in the size (40–50 nm) of NW growth for Ag NP-β-Ga₂O₃ NW. The photoluminescence spectra show an enhancement in the Ag NP-β-Ga₂O₃ NW structure. Lastly, the optical absorption spectra of β-Ga₂O₃ NW and Ag NP-β-Ga₂O₃ NW reveals that the presence of Ag NP in β-Ga₂O₃ NW enhance the photon absorption in the UV and the visible region as compared to β-Ga₂O₃ NW due to the synergistic action of Ag NP and β-Ga₂O₃ NW. This study demonstrates that high-quality Ag NP-β-Ga₂O₃ NW nanostructure can be grown in large quantities for a variety of applications, including photodetector, gas sensor, and power devices applications.

在本文中，辅助的银纳米粒子垂直排列的β-Ga _2个ö ₃纳米线（银NP-的β-Ga ₂ ö ₃ NW）通过掠射角沉积（GLAD）技术制造上硅（Si） -底物。有Ag NP的整合，XRD图案显示出在β-Ga构成的微晶尺寸的减小₂ ö ₃ NW。EDS分析证实了Ag NP的存在，从而进一步支持了XRD结果。SEM图像分析示出了在NW生长的大小（40-50纳米）的Ag为NP-的β-Ga的稠度₂ ö ₃ NW。光致发光光谱示出了在银增强NP-的β-Ga ₂ ö ₃NW结构。最后，的光吸收谱的β-Ga ₂ ö ₃ NW和Ag NP-的β-Ga ₂ ö ₃ NW揭示的Ag NP在存在的β-Ga ₂ ö ₃ NW提高在UV和可见的光子吸收区域相比的β-Ga ₂ ö ₃ NW由于银NP和β-Ga中的协同作用₂ ö ₃ NW。这项研究表明，高品质的Ag NP-的β-Ga ₂ ö ₃ NW纳米结构可以大量生长用于各种应用中，包括光电检测器，气体传感器，和功率器件应用。