Single-phase 2Gd₂O₃·(Gd,Tb)₂(SO₄)₃·nH₂O precursor with strong crystallinity was synthesized by the water-bath method through optimizing the introducing method of Tb³⁺ doping, where Tb³⁺ was introduced from Tb(NO₃)₃. The formation process and phase evolution of the precursor were analyzed in detail. Compared with the conventional method of introducing Tb³⁺ via Tb₄O₇, the inhomogeneous doping caused by the appearance of 2Tb₂O₃·(Gd,Tb)₂(SO₄)₃·nH₂O in the precursor was avoided. Pure Gd₂O₂S:Tb nanopowders with layered structure were obtained after calcination in flowing H₂-Ar. The Gd₂O₂S:Tb powder prepared with Tb(NO₃)₃ has higher XEL intensity than that with Tb₄O₇. Using the synthesized powders as starting material, Gd₂O₂S:Tb scintillation ceramics with high relative density (over 99% of the theoretical value) were fabricated by vacuum pre-sintering and HIP post-treatment in an argon atmosphere. The influences of the introducing method of Tb³⁺ doping on the microstructure, photoluminescence and X-ray excited luminescence of the Gd₂O₂S:Tb ceramics were studied. The ceramic sample prepared with Tb(NO₃)₃ has better luminescence properties due to the homogeneous doping in the ceramics. Temperature-dependent XEL measurements imply that the green emission of the ceramic sample is always dominant with the increase of temperature from 77 K to 340 K, attributed to the cross-relaxation between ⁵D₃ and ⁵D₄ levels of Tb³⁺.

单相2GD ₂ ö ₃ ·（钆，铽）₂（SO ₄）₃ ·nH的₂ ö前体与结晶强通过优化Tb的导入方法通过水浴方法合成³⁺掺杂，其中TB ³⁺由Tb（NO ₃）₃引入。详细分析了前驱体的形成过程和相演化。与传统的通过Tb ₄ O ₇引入Tb ^3+的方法相比，由2Tb ₂ O ₃ ·（Gd，Tb）₂的出现引起的不均匀掺杂。（SO ₄）₃ ·nH的₂被避免○在所述前体。在流动的H ₂ -Ar中煅烧后，得到具有分层结构的纯Gd ₂ O ₂ S：Tb纳米粉。用Tb（NO ₃）₃制备的Gd ₂ O ₂ S：Tb粉末的XEL强度高于用Tb ₄ O _7的粉末。以合成粉末为原料，Gd ₂ O ₂通过在氩气氛中进行真空预烧结和HIP后处理，制造出具有较高相对密度（超过理论值的99％）的S：Tb闪烁陶瓷。研究了Tb ³⁺掺杂的引入方法对Gd ₂ O ₂ S：Tb陶瓷的微观结构，光致发光和X射线激发发光的影响。由于陶瓷中的均匀掺杂，用Tb（NO ₃）₃制备的陶瓷样品具有更好的发光性能。取决于温度的XEL测量结果表明，随着温度从77 K升高到340 K，陶瓷样品的绿色发射始终占主导地位，这归因于⁵ D之间的交叉松弛Tb ^3+的₃和⁵ D ₄含量。