Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical direction and dominate the commercial nonvolatile memory market. However, several emerging nonvolatile technologies are under development by major commercial foundries or are already in small volume production, motivated by storage-class memory and embedded application drivers. These include spin-transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (ReRAM), phase change random access memory (PCRAM), and conductive bridge random access memory (CBRAM). Emerging memories have improved resilience to radiation effects compared to flash, which is based on storing charge, and hence may offer an expanded selection from which radiation-tolerant system designers can choose from in the future. This review discusses the material and device physics, fabrication, operational principles, and commercial status of scaled 2-D flash, 3-D flash, and emerging memory technologies. Radiation effects relevant to each of these memories are described, including the physics of and errors caused by total ionizing dose, displacement damage, and single-event effects, with an eye toward the future role of emerging technologies in radiation environments.

中文翻译：

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先进和新兴的非易失性存储器中的辐射效应

尽管遇到了2D缩放方面的主要障碍，但NAND闪存仍继续在垂直方向上进行缩放，并在商用非易失性存储器市场中占据主导地位。但是，受存储级内存和嵌入式应用程序驱动程序的推动，一些新兴的非易失性技术正在由主要的商业代工厂开发，或者已经处于小批量生产中。这些包括自旋转移矩磁随机存取存储器（STT-MRAM），电阻式随机存取存储器（ReRAM），相变随机存取存储器（PCRAM）和导电桥随机存取存储器（CBRAM）。与基于存储电荷的闪存相比，新兴的存储器具有更好的辐射效果弹性，因此可以提供扩展的选择，耐辐射系统的设计者将来可以从中进行选择。这篇评论讨论了缩放的2-D闪存，3-D闪存和新兴内存技术的材料和设备物理，制造，操作原理以及商业状态。描述了与这些存储器中的每一个有关的辐射效应，包括总电离剂量，位移损伤和单事件效应的物理和误差，并着眼于新兴技术在辐射环境中的未来作用。