Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical direction and dominate the commercial nonvolatile memory market. However, several emerging nonvolatile technologies are under development by major commercial foundries or are already in small volume production, motivated by storage-class memory and embedded application drivers. These include spin-transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (ReRAM), phase change random access memory (PCRAM), and conductive bridge random access memory (CBRAM). Emerging memories have improved resilience to radiation effects compared to flash, which is based on storing charge, and hence may offer an expanded selection from which radiation-tolerant system designers can choose from in the future. This review discusses the material and device physics, fabrication, operational principles, and commercial status of scaled 2-D flash, 3-D flash, and emerging memory technologies. Radiation effects relevant to each of these memories are described, including the physics of and errors caused by total ionizing dose, displacement damage, and single-event effects, with an eye toward the future role of emerging technologies in radiation environments.

中文翻译：

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先进和新兴非易失性存储器中的辐射效应


尽管在二维缩放方面遇到了主要障碍，但 NAND 闪存仍在垂直方向上扩展并主导商业非易失性存储器市场。然而，在存储级内存和嵌入式应用驱动程序的推动下，一些新兴的非易失性技术正在由主要商业代工厂开发，或者已经进行小批量生产。这些包括自旋转移矩磁性随机存取存储器（STT-MRAM）、电阻式随机存取存储器（ReRAM）、相变随机存取存储器（PCRAM）和导电桥随机存取存储器（CBRAM）。与基于存储电荷的闪存相比，新兴存储器提高了抗辐射效应的能力，因此可以为耐辐射系统设计人员在未来提供更多选择。本综述讨论了缩放 2D 闪存、3D 闪存和新兴存储技术的材料和器件物理、制造、操作原理和商业状况。描述了与每个存储器相关的辐射效应，包括总电离剂量、位移损伤和单粒子效应的物理原理和误差，着眼于新兴技术在辐射环境中的未来作用。