This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. Electrons with energies between 6 and 200 MeV were used at RADiation Effects Facility (RADEF) in Jyväskylä, Finland, and at Very energetic Electron facility for Space Planetary Exploration missions in harsh Radiative environments (VESPER) in The European Organization for Nuclear Research (CERN), Switzerland. Photon irradiation was also performed in Jyväskylä. In these irradiation tests, stuck bits originating from electron-induced single-event effects (SEEs) were found, as well as single bit-flips from single electrons. To the best knowledge of the authors, this is the first time that stuck bits from single-electron events have been reported in the literature. It is argued in the article that the single-event bit-flips and stuck bits are caused by the same damage mechanism, which would be large displacement damage clusters, and that the two different fault modes represent different amounts of damage to the memory cell. After a large particle fluence, a rapid increase in the error rate was observed, originating from the accumulation of smaller displacement damage clusters in the memory cells. The 110-nm memory was a candidate component to fly on the European Space Agency (ESA) JUpiter ICy moons Explorer (JUICE) mission, so the SEE cross section as a function of electron energy was compared to the expected electron environment encountered by JUICE to estimate the error rates during the mission.

中文翻译：

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木星环境中SDRAM中电子引起的不安和卡位

这项研究调查了同步动态随机存取存储器对高能电子的响应，尤其是电子在这些存储器中引起卡住位的可能性。测试了具有不同节点大小（63、72和110 nm）的三个不同内存。芬兰于韦斯屈莱的辐射效应设施（RADEF）和欧洲核研究组织（CERN）的苛刻辐射环境中的高能电子设施用于太空行星探索任务（VESPER）使用了6至200 MeV能量的电子。 ， 瑞士。在于韦斯屈莱也进行了光子辐照。在这些辐射测试中，发现了源自电子诱导的单事件效应（SEE）的卡住位，以及来自单个电子的单位翻转。据作者所知，这是文献中首次报道单电子事件的滞留位。文章认为，单事件位翻转和卡住位是由相同的损坏机制引起的，该损坏机制将是大位移损坏簇，并且两种不同的故障模式代表了对存储单元的不同程度的损坏。在大的粒子通量之后，观察到错误率迅速增加，这是由于较小的位移损伤簇在存储单元中的积累所致。110 nm内存是欧洲航天局（ESA）JUpiter ICy卫星探测器（JUICE）任务中飞行的候选组件，因此将SEE截面随电子能量的变化与JUICE遇到的预期电子环境进行了比较。估计任务期间的错误率。