In this article, we present the effects of voltage scaling and forward body biasing (FBB) on single-event effect sensitivity of a 28-nm ultra-thin body and box (UTBB) fully depleted silicon on insulator (FD-SOI) technology. Heavy-ion irradiation was performed for single-event upset (SEU) and single-event transient (SET) sensitivity assessment on characterization test chips under three supply voltages, with and without back-gate voltage application. Measurements show a steady SEU sensitivity for any supply voltage across the two FBB configurations, whereas SET sensitivity is diminished under FBB. SPICE and TCAD mixed-mode simulations were run to assess the contribution of electrical factors as well as charge extraction mechanisms. While drive strength is increased under FBB, the bipolar amplification plays an important role in sensitivity at low linear energy transfers (LETs).

中文翻译：

---

电源电压和体偏置对 UTBB FD-SOI 中单粒子扰动和单粒子瞬态的影响


在本文中，我们介绍了电压缩放和正向体偏压 (FBB) 对 28 nm 超薄体盒 (UTBB) 全耗尽绝缘体上硅 (FD-SOI) 技术的单粒子效应灵敏度的影响。在三种电源电压下，在有或没有背栅电压应用的情况下，对表征测试芯片进行重离子辐照，以进行单粒子翻转 (SEU) 和单粒子瞬态 (SET) 灵敏度评估。测量结果显示，对于两种 FBB 配置上的任何电源电压，SEU 灵敏度均稳定，而 SET 灵敏度在 FBB 下会降低。运行 SPICE 和 TCAD 混合模式仿真来评估电气因素以及电荷提取机制的贡献。虽然 FBB 下的驱动强度有所增加，但双极放大对于低线性能量转移 (LET) 的灵敏度起着重要作用。