The total ionizing dose (TID) sensitivity of mature and innovative technologies is investigated using both ionizing radiation experiments and Monte-Carlo simulations to discuss the potential of spectral photon radiation sources as an alternative for radiation effects studies. The impact of both technological and radiation test parameters on effective TID deposition is also discussed. All the layers struck by the incident radiation flux before reaching the targeted sensitive oxide are the major contributors of final ionizing dose deposits, rather than the actual sensitive oxide itself. Index Terms —ARACOR, back-end-of-line (BEOL), backside irradiation, Bremsstrahlung, bulk, CMOS, device packaging, dosimeters, front-end-of-line (FEOL), frontside irradiation, gamma, GAMRAY, LINAC, linear accelerator, metal–oxide–semiconductor field effect transistor (MOSFET), ORIATRON, radiation laboratory sources, silicon, silicon-on-insulator (SOI), SiO ₂ , total ionizing dose (TID), X-rays.

中文翻译：

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研究光谱光子辐射源以在微电子和纳米电子设备中进行TID实验

使用电离辐射实验和蒙特卡洛模拟研究了成熟和创新技术的总电离剂量（TID）敏感性，以讨论光谱光子辐射源作为替代辐射效应研究的潜力。还讨论了技术参数和辐射测试参数对有效TID沉积的影响。在到达目标敏感氧化物之前，入射辐射通量撞击的所有层都是最终电离剂量沉积的主要来源，而不是实际敏感氧化物本身。索引词 —ARACOR，后端（BEOL），背面照射，Bre致辐射，散装，CMOS，器件封装，剂量计，前端（FEOL），正面照射，伽马，GAMRAY，LINAC，线性加速器，金属氧化物半导体场效应晶体管（MOSFET），ORIATRON，辐射实验室源，硅，绝缘体上硅（SOI），SiO ₂ ，总电离剂量（TID），X射线。