Influence of Defects on the Schottky Barrier Height at BaTiO3/RuO2 Interfaces,Physica Status Solidi (A) - Applications and Materials Science

当前位置： X-MOL 学术 › Phys. Status Solidi A › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Influence of Defects on the Schottky Barrier Height at BaTiO3/RuO2 Interfaces
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-05-19 , DOI: 10.1002/pssa.202100143
Katharina N.S. Schuldt ₁ , Hui Ding ₁ , Jean-Christophe Jaud ₂ , Jurij Koruza ₃ , Andreas Klein ₁

Affiliation

The Schottky barrier formation between polycrystalline acceptor-doped BaTiO₃ and high work function RuO₂ is studied using photoelectron spectroscopy. Schottky barrier heights for electrons of ≈1.4 eV are determined, independent of doping level and oxygen vacancy concentration of the substrates. The insensitivity of the barrier height is related to the high permittivity of BaTiO₃, which results in space-charge regions (SCRs) being considerably wider than the inelastic mean free path of the photoelectrons. SCRs at any kind of interface should, therefore, be more important for the electronic and ionic conductivities in BaTiO₃ than in materials with lower permittivity. A Ba-rich phase at the surface of reduced acceptor-doped BaTiO₃ is also identified, which is explained by the formation of Ti vacancies in the 2D electron gas region at the surface.

中文翻译：

缺陷对 BaTiO3/RuO2 界面肖特基势垒高度的影响

使用光电子能谱研究了多晶受主掺杂的 BaTiO ₃和高功函数 RuO ₂之间的肖特基势垒形成。电子的肖特基势垒高度约为 1.4 eV，与衬底的掺杂水平和氧空位浓度无关。势垒高度的不敏感性与 BaTiO ₃的高介电常数有关，这导致空间电荷区 (SCR) 比光电子的非弹性平均自由程宽得多。因此，与介电常数较低的材料相比，任何类型界面上的 SCR 对 BaTiO _{3 中}的电子和离子电导率都更重要。还原受主掺杂的 BaTiO 表面的富 Ba 相还确定了图₃，这是通过在表面的 2D 电子气区域中形成 Ti 空位来解释的。

更新日期：2021-07-22

点击分享查看原文

点击收藏

阅读更多本刊最新论文