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G–C4N3–graphene-g-C4N3: A useful spin thermoelectric material
Journal of Physics and Chemistry of Solids ( IF 4.3 ) Pub Date : 2021-05-20 , DOI: 10.1016/j.jpcs.2021.110186
Rinki Bhowmick , Sayantanu Koley , Mausumi Chattopadhyaya , Sabyasachi Sen

Present investigation establishes simple 2D tunnelling nanostructure created by an assembly of ferromagnetic g-C4N3 electrodes separated by insulating graphene sheet; as a potential spincaloritronic device. The system shows large departure in up and down spin component of Seebeck coefficient and spin thermoelectric figure of merit is 103 times larger than charge part. Emergence of spin polarized Seebeck coefficient may be attributed to intrinsic ferromagnetism of g-C4N3 and spin-injection from ferromagnetic electrode to insulating graphene. This widely varying spin polarized Seebeck coefficient is attributed to large negative slope of logarithmic transmission coefficient of spin up channel compared to spin down counterpart.



中文翻译:

G–C 4 N 3 –石墨烯-gC 4 N 3:一种有用的自旋热电材料

目前的研究建立了由绝缘石墨烯片隔开的铁磁gC 4 N 3电极组件所产生的简单的二维隧穿纳米结构。作为一种潜在的自旋电子器件。系统显示,塞贝克系数的上下自旋分量有较大偏差,自旋热电性能因数比电荷部分大10 3倍。自旋极化塞贝克系数的出现可能归因于gC 4 N 3的固有铁磁性从铁磁电极到绝缘石墨烯的自旋注入。与自旋下降对应物相比,自旋极化塞贝克系数的广泛变化是由于自旋上升通道的对数透射系数具有较大的负斜率。

更新日期:2021-05-26
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