Development of High-Sensitivity Poly(2,7-(9,9-dioctylfluorene)-alt-5,5-(4′,7′-di-2-thienylbenzo [c][1,2,5]thiadiazole)) Thin-Film-Based Phototransistors by the Ribbon-Floating Film Transfer Method,Physica Status Solidi-Rapid Research Letters

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Development of High-Sensitivity Poly(2,7-(9,9-dioctylfluorene)-alt-5,5-(4′,7′-di-2-thienylbenzo [c][1,2,5]thiadiazole)) Thin-Film-Based Phototransistors by the Ribbon-Floating Film Transfer Method
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-05-18 , DOI: 10.1002/pssr.202100185
Nidhi Yadav ₁ , Nikita Kumari ₂ , Yoshito Ando ₂ , Shyam S Pandey ₂ , Vipul Singh ₁

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Alignment of polymer chains holds the key to the development of highly functional polymer-based field-effect transistors (FETs). The recently developed ribbon-floating film transfer method (ribbon-FTM) has the potential for development of polymer thin films with highly aligned chains, which are desirable for fabrication of efficient planar devices. These thin films consisting of well-aligned polymer chains exhibit high degree of optical and electronic anisotropies. Herein, ribbon-FTM-processed thin-film-based organic photosensitive transistors of poly(2,7-(9,9-dioctylfluorene)-alt-5,5-(4′,7′-di-2-thienylbenzo [c][1,2,5]thiadiazole)) (PFO-DBT) are reported. Under optimized fabrication conditions, polymer FETs based on PFO-DBT demonstrate a charge carrier mobility of 0.002 cm² V⁻¹ s⁻¹ and an on–off ratio of 5 × 10⁴ under dark conditions. The devices further demonstrate a photosensitivity of ≈10⁴ and 10³ and a high responsivity of 8.37 and 4.6 A W⁻¹ against green and red light illuminations, respectively. The results hold promise for the development of conducting-polymer-based high-performance photosensitive organic field-effect transistors (OFETs).

中文翻译：

高灵敏度的发展聚（2,7-（9,9-二辛基芴）-alt-5,5-（4'，7'-二-2- thienylbenzo并[c] [1,2,5]噻二唑））基于薄膜光电晶体管由丝带飘影传输方法

聚合物链的取向是关键到高功能的基于聚合物的场效应晶体管（FET）的发展。最近开发的带浮动膜转移方法（薄FTM）具有用于聚合物薄膜具有高度对齐链，这是所希望的高效平面器件的制造发展的潜力。这些由排列良好的聚合物链组成的薄膜表现出高度的光学和电子各向异性。-聚（2,7-（9,9-二辛基芴）的在此，带状FTM处理的薄膜为基础的有机光敏晶体管ALT -5,5-（4'，7'-二-2- thienylbenzo并[c ] [报道1,2,5]噻二唑））（PFO-DBT）。在优化制造条件，基于PFO-DBT聚合物的FET证明0.002厘米的电荷载体迁移率² V^-1 š ^-1和开闭的5×10比⁴下黑暗条件。该器件进一步证明的≈10光敏性⁴和10 ³和8.37和4.6 W的高响应^-1对绿色和红色光照明，分别。结果有希望用于传导聚合物为基础的高性能光敏有机场效应晶体管（OFET）的发展。

更新日期：2021-05-18

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