Point-defect engineering is an effective way to control the mobility and transparent-conducting performance of sputtered fluorine-doped ZnO (FZO) thin films. In this study, doping with fluorine (F) is accomplished through a simple one-step deposition process and is demonstrated to enhance the crystal quality, eliminate the point defects, and boost the mobility as well as the performance of the films. Furthermore, the films’ characteristics are observed to be strongly dependent on F content. At the optimum F content of 1%, the FZO films exhibited the best crystal quality and the lowest concentration of Zn interstitial and O vacancy defects due to F passivation. Moreover, a mobility as high as 45.3 cm²/V and the greatest figure-of-merit performance are achieved for cutting-edge transparent electrode applications. However, a further increase of F content brought about an increased concentration of defects relating to Zn vacancies, especially F interstitials, which yielded the low mobility and poor performance due to the degraded structure.

点缺陷工程是控制溅射掺氟 ZnO (FZO) 薄膜迁移率和透明导电性能的有效方法。在这项研究中，氟 (F) 掺杂是通过简单的一步沉积过程完成的，并被证明可以提高晶体质量、消除点缺陷、提高迁移率以及薄膜的性能。此外，观察到薄膜的特性强烈依赖于 F 含量。在 1% 的最佳 F 含量下，由于 F 钝化，FZO 薄膜表现出最好的晶体质量和最低的 Zn 间隙和 O 空位缺陷浓度。此外，流动性高达 45.3 cm ²/V 和最高品质因数性能可用于尖端的透明电极应用。然而，F 含量的进一步增加导致与 Zn 空位相关的缺陷浓度增加，尤其是 F 间隙，由于结构退化，导致迁移率低和性能差。