Developing strong electro-optic (EO) effect materials and devices is vital for high-speed optical communications and integrated photonics. In this work, we explored a chemical solution deposition technique to grow pure perovskite lead zirconate titanate (PZT) films on sapphire substrates. The grown PZT films demonstrated a preferential orientation and a broadband optical transmission window ranging from 600 to 2500 nm. Based on the high-quality film, we subsequently designed and fabricated a PZT Mach-Zehnder interference waveguide EO modulator. The measured half-wave voltage V_π is 3.6 V at the wavelength of 1550 nm, corresponding to an in-device EO coefficient as high as ∼133 pm/V. The response of the PZT modulator from 6 to 12 GHz has been measured. We foresee that our work may pave the way towards power-efficient, ultra-compact integrated devices, including modulators, switches and sensors.

中文翻译：

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高电光系数锆钛酸铅薄膜向低功率和紧凑型调制器发展

开发强电光 (EO) 效应材料和器件对于高速光通信和集成光子学至关重要。在这项工作中，我们探索了一种化学溶液沉积技术，以在蓝宝石衬底上生长纯钙钛矿锆钛酸铅 (PZT) 薄膜。生长的 PZT 薄膜表现出优先取向和范围从 600 到 2500 nm 的宽带光传输窗口。基于高质量的薄膜，我们随后设计并制造了 PZT Mach-Zehnder 干涉波导 EO 调制器。测得的半波电压V _π在 1550 nm 波长处为 3.6 V，对应于高达 133 pm/V 的器件内 EO 系数。已经测量了 PZT 调制器从 6 到 12 GHz 的响应。我们预见到，我们的工作可能为实现节能、超紧凑的集成设备铺平道路，包括调制器、开关和传感器。