We investigate the drift and Hall mobility of a quasi-two-dimensional electron gas (Q2DEG) confined in wurtzite AlGaN/GaN/AlGaN square quantum wells (QWs). We use the variational-subband-wave-function model for carrier confinement and assume that the electrons only occupy the lowest subband. We take into consideration the most important scattering mechanisms such as the edge and charged dislocation, remote and background impurity, interface roughness, acoustic phonon via deformation potential and piezoelectric field, and polar LO phonon. Assuming the scattering by acoustic phonons to be quasi-elastic and using the iterative method for inelastic regime, where the LO phonon scattering becomes important, we study the dependence of the mobility on the temperature T, carrier density \(N_{\mathrm {s}}\), and QW width L.

我们研究了纤锌矿型AlGaN / GaN / AlGaN方量子阱（QWs）中的准二维电子气（Q2DEG）的漂移和霍尔迁移率。我们将变分子带波函数模型用于载流子限制，并假设电子仅占据最低的子带。我们考虑了最重要的散射机制，例如边缘和带电位错，远端和背景杂质，界面粗糙度，通过形变势和压电场产生的声子和极性LO声子。假设声子的散射是准弹性的，并采用非弹性状态的迭代方法，其中LO声子的散射变得很重要，我们研究了迁移率对温度T的依赖，载流子密度\（N _ {\ mathrm {s }} \）和QW宽度大号。