当前位置：
X-MOL 学术
›
Plasma Processes Polym.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Gas-phase chemistry and reactive-ion etching kinetics for silicon-based materials in C4F8 + O2 + Ar plasma
Plasma Processes and Polymers ( IF 2.9 ) Pub Date : 2021-05-17 , DOI: 10.1002/ppap.202000249 Byung Jun Lee 1 , Alexander Efremov 2 , Kwang‐Ho Kwon 1
Plasma Processes and Polymers ( IF 2.9 ) Pub Date : 2021-05-17 , DOI: 10.1002/ppap.202000249 Byung Jun Lee 1 , Alexander Efremov 2 , Kwang‐Ho Kwon 1
Affiliation
|
In this study, we investigated the effects of C4F8/O2 and Ar/O2 component ratios in C4F8 + O2 + Ar gas system on plasma parameters, gas-phase chemistry, and etching kinetics for Si, SiO2, and Si3N4 under the condition of inductively coupled radiofrequency (13.56 MHz) plasma. The use of plasma diagnostics by Langmuir probes, together with the zero-dimensional plasma modeling, allowed one to compare two different gas mixing regimes in respect to (a) electrons- and ions-related plasma parameters; (b) steady-state densities of plasma active species; and (c) formation and decay kinetics for F atoms and polymerizing radicals. It was shown that variations in both C4F8/O2 and Ar/O2 mixing ratios result in nonmonotonic (with maximums at ∼10% to 15% O2) Si, SiO2, and Si3N4 etching rates as well as in opposite changes in corresponding effective reaction probabilities. The model-based analysis of etching mechanisms allowed one to suggest that the net effect from all heterogeneous (i.e., appeared on the etched surface) interaction pathways may be controlled either by the fluorocarbon radical flux (in the case of Ar/O2 mixing ratios at constant fraction of C4F8) through the polymer film thickness or by the O atom flux (in the case of C4F8/O2 mixing ratios at constant fraction of Ar) through the balance of adsorption sites.
中文翻译：
C4F8 + O2 + Ar 等离子体中硅基材料的气相化学和反应离子蚀刻动力学
在本研究中，我们研究了C 4 F 8 + O 2 + Ar 气体系统中 C 4 F 8 /O 2和 Ar/O 2组分比对 Si 的等离子体参数、气相化学和蚀刻动力学的影响， SiO 2和 Si 3 N 4在感应耦合射频（13.56 MHz）等离子体条件下。Langmuir 探针对等离子体诊断的使用，连同零维等离子体建模，允许人们在 (a) 电子和离子相关的等离子体参数方面比较两种不同的气体混合方式；(b) 等离子体活性物质的稳态密度；(c) F 原子和聚合自由基的形成和衰变动力学。结果表明，C 4 F 8 /O 2和Ar/O 2混合比的变化导致非单调（最大值为~10% 至15% O 2）Si、SiO 2和Si 3 N 4蚀刻速率以及相应有效反应概率的相反变化。基于模型的蚀刻机制分析允许人们提出所有异质（即出现在蚀刻表面）相互作用途径的净效应可能受碳氟化合物自由基通量（在 Ar/O 2混合比的情况下）控制在 C 4 F 8 的恒定分数）通过聚合物膜厚度或通过 O 原子通量（在 C 4 F 8 /O 2混合比在 Ar 的恒定分数的情况下）通过吸附位点的平衡。
更新日期：2021-07-05
中文翻译：
C4F8 + O2 + Ar 等离子体中硅基材料的气相化学和反应离子蚀刻动力学
在本研究中，我们研究了C 4 F 8 + O 2 + Ar 气体系统中 C 4 F 8 /O 2和 Ar/O 2组分比对 Si 的等离子体参数、气相化学和蚀刻动力学的影响， SiO 2和 Si 3 N 4在感应耦合射频（13.56 MHz）等离子体条件下。Langmuir 探针对等离子体诊断的使用，连同零维等离子体建模，允许人们在 (a) 电子和离子相关的等离子体参数方面比较两种不同的气体混合方式；(b) 等离子体活性物质的稳态密度；(c) F 原子和聚合自由基的形成和衰变动力学。结果表明，C 4 F 8 /O 2和Ar/O 2混合比的变化导致非单调（最大值为~10% 至15% O 2）Si、SiO 2和Si 3 N 4蚀刻速率以及相应有效反应概率的相反变化。基于模型的蚀刻机制分析允许人们提出所有异质（即出现在蚀刻表面）相互作用途径的净效应可能受碳氟化合物自由基通量（在 Ar/O 2混合比的情况下）控制在 C 4 F 8 的恒定分数）通过聚合物膜厚度或通过 O 原子通量（在 C 4 F 8 /O 2混合比在 Ar 的恒定分数的情况下）通过吸附位点的平衡。
京公网安备 11010802027423号