This paper presents design and characterization of single-chip 110–170 GHz (D-band) direct conversion in-phase/quadrature-phase (I/Q) transmitter and receiver monolithic microwave integrated circuits (MMICs), realized in a 130 nm SiGe BiCMOS process with ft/fmax of 250 GHz/370 GHz. The chipset is suitable for low power wideband communication and can be used in both homodyne and heterodyne architectures. The Transmitter chip consists of a six-stage power amplifier, an I/Q modulator, and a LO multiplier chain. The LO multiplier chain consists of frequency sixtupler followed by a two-stage amplifier. It exhibits a single sideband conversion gain of 23 dB and saturated output power of 0 dBm. The 3 dB RF bandwidth is 31 GHz from 114 to 145 GHz. The receiver includes a low noise amplifier, I/Q demodulator and ×6 multiplier chain at the LO port. The receiver provides a conversion gain of 27 dB and has a noise figure of 10 dB. It has 3dB RF bandwidth of 28 GHz from 112–140 GHz. The transmitter and receiver have dc power consumption of 240 mW and 280 mW, respectively. The chip area of each transmitter and receiver circuit is 1.4 mm×1.1 mm.

中文翻译：

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采用SiGe BiCMOS技术的完全集成的D波段直接转换I / Q发送器和接收器芯片组

本文介绍了在130 nm SiGe中实现的单芯片110-170 GHz（D波段）直接转换同相/正交相（I / Q）发送器和接收器单片微波集成电路（MMIC）的设计和特性。 ft / fmax为250 GHz / 370 GHz的BiCMOS工艺。该芯片组适用于低功率宽带通信，可用于零差和外差架构。发送器芯片由一个六级功率放大器，一个I / Q调制器和一个LO乘法器链组成。LO乘法器链由频率六倍频器和随后的两级放大器组成。它具有23 dB的单边带转换增益和0 dBm的饱和输出功率。3 dB RF带宽为114至145 GHz，为31 GHz。接收器在LO端口包括一个低噪声放大器，I / Q解调器和×6乘法器链。接收器的转换增益为27 dB，噪声系数为10 dB。它在112–140 GHz范围内具有28 GHz的3dB RF带宽。发射器和接收器的直流功耗分别为240 mW和280 mW。每个发送器和接收器电路的芯片面积为1.4 mm×1.1 mm。