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Monolithic Thin Film Red LED Active-Matrix Micro-Display by Flip-Chip Technology
IEEE Photonics Technology Letters ( IF 2.3 ) Pub Date : 2021-05-08 , DOI: 10.1109/lpt.2021.3078198
Peian Li , Xu Zhang , Wing Cheung Chong , Kei May Lau

A monolithic thin film red light emitting diode (LED) active-matrix (AM) micro-display driven by a complementary metal-oxide semiconductor (CMOS) driver is demonstrated. The resolution of the micro-display is 64×36, with a 40 μm ×40 μm pixel pitch. Starting from AlGaInP epi-layers grown on GaAs substrates, the monolithic red LED array was fabricated and then integrated with the AM driver using Au/In flip-chip bonding technology. After removal of the GaAs substrate, a crack-free thin film micro-display was realized with a high pixel yield. The thin film red LED AM micro-display delivers a luminance of 2.35×104 cd/m2 at full-load conditions and can render images with 4-bit grayscale. This work not only provides a manufacturing-friendly approach for monolithic thin film red LED micro-displays, but also brings the possibility of hybrid integration with blue/green LEDs to achieve full-color LED micro-displays.

中文翻译:


采用倒装芯片技术的单片薄膜红色 LED 有源矩阵微显示器



演示了由互补金属氧化物半导体 (CMOS) 驱动器驱动的单片薄膜红色发光二极管 (LED) 有源矩阵 (AM) 微显示器。微显示器的分辨率为64×36,像素间距为40μm×40μm。从在 GaAs 基板上生长的 AlGaInP 外延层开始,制造出单片红色 LED 阵列,然后使用 Au/In 倒装芯片接合技术与 AM 驱动器集成。去除GaAs基板后,实现了无裂纹且像素良率高的薄膜微显示器。薄膜红色LED AM微显示器在满载条件下的亮度为2.35×104 cd/m2,可以呈现4位灰度的图像。这项工作不仅为单片薄膜红色LED微显示器提供了一种易于制造的方法,而且还带来了与蓝/绿LED混合集成以实现全彩LED微显示器的可能性。
更新日期:2021-05-08
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